公开(公告)号：US20200373344A1

公开(公告)日：2020-11-26

申请号：US16422271

申请日：2019-05-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Huai-jen TUNG ,  Ching-Chung SU ,  Keng-Ying LIAO ,  Po-Zen CHEN ,  Su-Yu YEH ,  S.Y. CHEN

IPC: H01L27/146 ,  H01L23/00

Abstract: The present disclosure describes the formation of a pad structure in an image sensor device using a sacrificial isolation region and a silicon oxide based stack with no intervening nitride etch-stop layers. The image sensor device includes a semiconductor layer comprising a first horizontal surface opposite to a second horizontal surface; a metallization layer formed on the second horizontal surface of the semiconductor layer, where the metallization layer includes a dielectric layer. The image sensor device also includes a pad region traversing through the semiconductor layer from the first horizontal surface to the second horizontal surface. The pad region includes an oxide layer with no intervening nitride layers formed on the dielectric layer of the metallization layer and a pad structure in physical contact with a conductive structure of the metallization layer.

公开(公告)号：US20180286907A1

公开(公告)日：2018-10-04

申请号：US15476370

申请日：2017-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Chung SU ,  Hung-Wen HSU ,  Wei-Chuang WU ,  Wei-Lin CHEN ,  Jiech-Fun LU

IPC: H01L27/146

CPC classification number: H01L33/46 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14868 ,  H01L31/056

Abstract: Structures and formation methods of an image sensor structure are provided. The image sensor structure is provided. The image sensor structure includes a substrate, a photodiode component in the substrate, and a grid structure over the substrate. The grid structure includes a bottom dielectric element over the substrate, a reflective element over the bottom dielectric element, and an upper dielectric element over the reflective element. The reflective element has a sidewall which is anti-corrosive in a basic condition and an acidic condition. The image sensor structure also includes a color filter element over the substrate and surrounded by the grid structure. The color filter element is aligned with the photodiode component.

公开(公告)号：US20160276386A1

公开(公告)日：2016-09-22

申请号：US14658465

申请日：2015-03-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hung-Wen HSU ,  Ching-Chung SU ,  Cheng-Hsien CHOU ,  Jiech-Fun LU ,  Shih-Pei CHOU ,  Yeur-Luen TU

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14687 ,  H01L27/14689

Abstract: An image sensor structure is provided. The image sensor device structure includes a substrate, and the substrate includes an array region and a peripheral region. The image sensor device structure includes an anti-reflection layer formed on the substrate and a buffer layer formed on the anti-reflection layer. The image sensor device structure includes a first etch stop layer formed on the buffer layer and a metal grid structure formed on the first etch stop layer. The image sensor device structure also includes a dielectric layer formed on the metal grid structure.

Abstract translation: 提供图像传感器结构。 图像传感器装置结构包括基板，并且基板包括阵列区域和外围区域。 图像传感器装置结构包括形成在基板上的防反射层和形成在抗反射层上的缓冲层。 图像传感器装置结构包括形成在缓冲层上的第一蚀刻停止层和形成在第一蚀刻停止层上的金属栅格结构。 图像传感器装置结构还包括形成在金属栅格结构上的电介质层。