公开(公告)号：US20190157319A1

公开(公告)日：2019-05-23

申请号：US15868324

申请日：2018-01-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Ting CHIANG ,  Chun-Yuan CHEN ,  Hsiao-Hui TSENG ,  Yu-Jen WANG ,  Shyh-Fann TING ,  Wei-Chuang WU ,  Jen-Cheng LIU ,  Dun-Nian YAUNG

IPC: H01L27/146 ,  H01L31/11 ,  H01L31/0352

Abstract: An image sensor device structure is provided. The image sensor device structure includes a substrate, and the substrate is doped with a first conductivity type. The image sensor device structure includes a light-sensing region formed in the substrate, and the light-sensing region is doped with a second conductivity type that is different from the first conductivity type. The image sensor device structure further includes a doping region extended into the light-sensing region, and the doping region is doped with the first conductivity type. The image sensor device structure also includes a plurality of color filters formed on the doping region.

公开(公告)号：US20200035723A1

公开(公告)日：2020-01-30

申请号：US16591136

申请日：2019-10-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Ting CHIANG ,  Chun-Yuan CHEN ,  Hsiao-Hui TSENG ,  Yu-Jen WANG ,  Shyh-Fann TING ,  Wei-Chuang WU ,  Jen-Cheng LIU ,  Dun-Nian YAUNG

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/11

Abstract: A method for forming an image sensor device structure is provided. The method includes forming a light-sensing region in a substrate, and forming an interconnect structure below a first surface of the substrate. The method also includes forming a trench in the light-sensing region from a second surface of the substrate, and forming a doping layer in the trench. The method includes forming an oxide layer in the trench and on the doping layer to form a doping region, and the doping region is inserted into the light-sensing region.

公开(公告)号：US20180286907A1

公开(公告)日：2018-10-04

申请号：US15476370

申请日：2017-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Chung SU ,  Hung-Wen HSU ,  Wei-Chuang WU ,  Wei-Lin CHEN ,  Jiech-Fun LU

IPC: H01L27/146

CPC classification number: H01L33/46 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14868 ,  H01L31/056

Abstract: Structures and formation methods of an image sensor structure are provided. The image sensor structure is provided. The image sensor structure includes a substrate, a photodiode component in the substrate, and a grid structure over the substrate. The grid structure includes a bottom dielectric element over the substrate, a reflective element over the bottom dielectric element, and an upper dielectric element over the reflective element. The reflective element has a sidewall which is anti-corrosive in a basic condition and an acidic condition. The image sensor structure also includes a color filter element over the substrate and surrounded by the grid structure. The color filter element is aligned with the photodiode component.

公开(公告)号：US20180158850A1

公开(公告)日：2018-06-07

申请号：US15591244

申请日：2017-05-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chuang WU ,  Ming-Tsong WANG ,  Feng-Chi HUNG ,  Ching-Chun WANG ,  Jen-Cheng LIU ,  Dun-Nian YAUNG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687

Abstract: The image sensing device includes a semiconductor substrate, an interconnection layer, a radiation-sensing region and an isolation structure. The semiconductor substrate has a front surface and a back surface. The interconnection layer is disposed over the front surface of the semiconductor substrate. The radiation-sensing region is disposed in the semiconductor substrate. The isolation structure is disposed on the back surface of the semiconductor substrate. The isolation structure includes a trench and an etch stop layer. The trench extends from the back surface of the semiconductor substrate. The etch stop layer is disposed along the trench. An etch selectivity of a silicon oxide film to the etch stop layer is greater than a predetermined value.