公开(公告)号：US20250149380A1

公开(公告)日：2025-05-08

申请号：US18415770

申请日：2024-01-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Da Cheng ,  Eugene Chow Chi Hao ,  Chang-Jung Hsueh ,  Chun-Fu Wu ,  Wen-Hsiung Lu

IPC: H01L21/768 ,  C23C18/38 ,  H01L21/285 ,  H01L21/288

Abstract: A method includes adding a first additive to an electroplating solution, wherein the first additive is a relatively weak suppressing agent; adding a second additive to the electroplating solution, wherein the second additive is a relatively strong suppressing agent; adding a third additive to the electroplating solution, wherein the third additive is a leveling agent; and depositing copper using the electroplating solution, wherein most of the copper is nanotwinned grains having a (111)-orientation.