公开(公告)号：US20190164960A1

公开(公告)日：2019-05-30

申请号：US15821970

申请日：2017-11-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Han CHEN ,  Chen-Ming LEE ,  Fu-Kai YANG ,  Mei-Yun WANG ,  Jr-Hung LI ,  Bo-Cyuan LU

IPC: H01L27/088 ,  H01L29/423 ,  H01L21/8234

Abstract: A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and a first gate structure formed over the fin structure. The FinFET device structure also includes a first capping layer formed over the first gate structure and a first etching stop layer over the first capping layer and the first gate structure. The FinFET device structure further includes a first source/drain (S/D) contact structure formed over the fin structure and adjacent to the first gate structure. A portion of the first etching stop layer which is directly above the first capping layer is higher than another portion of the first etching stop layer which is directly above the first gate spacer layer.

公开(公告)号：US20200043924A1

公开(公告)日：2020-02-06

申请号：US16596209

申请日：2019-10-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Han CHEN ,  Chen-Ming LEE ,  Fu-Kai YANG ,  Mei-Yun WANG ,  Jr-Hung LI ,  Bo-Cyuan LU

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/66

Abstract: A FinFET device structure is provided. The FinFET device structure includes a first gate structure formed over a fin structure, and a first capping layer formed over the first gate structure. The FinFET device structure includes a first etching stop layer formed over the first capping layer and the first gate structure, and a top surface and a sidewall surface of the first capping layer are in direct contact with the first etching stop layer.