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公开(公告)号:US20210098283A1
公开(公告)日:2021-04-01
申请号:US16953949
申请日:2020-11-20
发明人: Shen-Nan LEE , Teng-Chun TSAI , Chen-Hao WU , Chu-An LEE , Chun-Hung LIAO , Tsung-Ling TSAI
IPC分类号: H01L21/768 , H01L23/532 , H01L23/522
摘要: A semiconductor structure is provided, including a conductive layer, a dielectric layer over the conductive layer, a ruthenium material in the dielectric layer and in contact with a portion of the conductive layer, and a ruthenium oxide material in the dielectric layer laterally between the ruthenium material and the dielectric layer.
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公开(公告)号:US20230021172A1
公开(公告)日:2023-01-19
申请号:US17377759
申请日:2021-07-16
发明人: Chun-Hung LIAO , Chen-Hao Wu , An-Hsuan Lee , Huang-Lin Chao
IPC分类号: B24B53/017 , B24B57/02
摘要: The present disclosure describes a method and an apparatus that can enhance the slurry oxidizability for a chemical mechanical polishing (CMP) process. The method can include securing a substrate onto a carrier of a polishing system. The method can further include dispensing, via a feeder of the polishing system, a first slurry towards a polishing pad of the polishing system. The method can further include forming a second slurry by enhancing an oxidizability of the first slurry, and performing a polishing process, with the second slurry, on the substrate.
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公开(公告)号:US20200090983A1
公开(公告)日:2020-03-19
申请号:US16129899
申请日:2018-09-13
发明人: Shen-Nan LEE , Teng-Chun TSAI , Chen-Hao WU , Chu-An LEE , Chun-Hung LIAO , Tsung-Ling TSAI
IPC分类号: H01L21/768 , H01L23/522 , H01L23/532
摘要: A method of manufacturing a semiconductor structure includes: forming a dielectric layer over a conductive layer; removing a portion of the dielectric layer to form an opening exposing a portion of the conductive layer; filling a ruthenium-containing material in the opening and in contact with the dielectric layer; and polishing the ruthenium-containing material using a slurry including an abrasive and an oxidizer selected from the group consisting of hydrogen peroxide (H2O2), potassium periodate (KIO4), potassium iodate (KIO3), potassium permanganate (KMnO4), iron(III) nitrate (FeNO3) and a combination thereof.
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