公开(公告)号：US20210098283A1

公开(公告)日：2021-04-01

申请号：US16953949

申请日：2020-11-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shen-Nan LEE ,  Teng-Chun TSAI ,  Chen-Hao WU ,  Chu-An LEE ,  Chun-Hung LIAO ,  Tsung-Ling TSAI

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

Abstract: A semiconductor structure is provided, including a conductive layer, a dielectric layer over the conductive layer, a ruthenium material in the dielectric layer and in contact with a portion of the conductive layer, and a ruthenium oxide material in the dielectric layer laterally between the ruthenium material and the dielectric layer.

公开(公告)号：US20230021172A1

公开(公告)日：2023-01-19

申请号：US17377759

申请日：2021-07-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hung LIAO ,  Chen-Hao Wu ,  An-Hsuan Lee ,  Huang-Lin Chao

IPC: B24B53/017 ,  B24B57/02

Abstract: The present disclosure describes a method and an apparatus that can enhance the slurry oxidizability for a chemical mechanical polishing (CMP) process. The method can include securing a substrate onto a carrier of a polishing system. The method can further include dispensing, via a feeder of the polishing system, a first slurry towards a polishing pad of the polishing system. The method can further include forming a second slurry by enhancing an oxidizability of the first slurry, and performing a polishing process, with the second slurry, on the substrate.

公开(公告)号：US20200090983A1

公开(公告)日：2020-03-19

申请号：US16129899

申请日：2018-09-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shen-Nan LEE ,  Teng-Chun TSAI ,  Chen-Hao WU ,  Chu-An LEE ,  Chun-Hung LIAO ,  Tsung-Ling TSAI

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A method of manufacturing a semiconductor structure includes: forming a dielectric layer over a conductive layer; removing a portion of the dielectric layer to form an opening exposing a portion of the conductive layer; filling a ruthenium-containing material in the opening and in contact with the dielectric layer; and polishing the ruthenium-containing material using a slurry including an abrasive and an oxidizer selected from the group consisting of hydrogen peroxide (H2O2), potassium periodate (KIO4), potassium iodate (KIO3), potassium permanganate (KMnO4), iron(III) nitrate (FeNO3) and a combination thereof.