公开(公告)号：US20200030934A1

公开(公告)日：2020-01-30

申请号：US16454402

申请日：2019-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Hsuan Lee ,  Ming-Shiuan She ,  Chen-Hao Wu ,  Chun-Hung Liao ,  Shen-Nan Lee ,  Teng-Chun Tsai

IPC: B24B37/24 ,  C09G1/02 ,  B24B37/10

Abstract: A method of forming a CMP pad includes providing a solution of a block copolymer (BCP), where the BCP includes a first segment and a second segment connected to the first segment, the second segment being different from the first segment in composition. The method further includes processing the BCP to form a polymer network having a first phase and a second phase embedded in the first phase, where the first phase includes the first segment and the second phase includes the second segment, and subsequently removing the second phase from the polymer network, thereby forming a polymer film that includes a network of pores embedded in the first phase. Thereafter, the method proceeds to combining the CMP top pad and a CMP sub-pad to form a CMP pad, where the CMP top pad is configured to engage with a workpiece during a CMP process.

公开(公告)号：US20230347471A1

公开(公告)日：2023-11-02

申请号：US18349491

申请日：2023-07-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Hsuan Lee ,  Ming-Shiuan She ,  Chen-Hao Wu ,  Chun-Hung Liao ,  Shen-Nan Lee ,  Teng-Chun Tsai

IPC: B24B37/24 ,  C09G1/02 ,  B24B37/10 ,  B32B3/12 ,  B32B3/10 ,  C08J9/26

CPC classification number: B24B37/24 ,  C09G1/02 ,  B24B37/107 ,  B32B3/12 ,  B32B3/10 ,  C08J9/26 ,  C08L81/06

Abstract: A method disclosed herein includes forming a polishing pad configured for a chemical-mechanical polishing (CMP) process and polishing a workpiece using the polishing pad and a CMP slurry. Forming the polishing pad includes forming an interpenetrating polymer network having a first phase and a second phase embedded in the first phase, removing the second phase from the interpenetrating polymer network, thereby forming a porous top pad that includes a network of pores embedded in the first phase, and adhering the porous top pad to a sub pad, thereby forming the polishing pad. The second phase is different from the first phase in composition, and the interpenetrating polymer network has a substantially periodic pattern. Surface roughness of the porous top pad is consistent during the polishing of the workpiece.

公开(公告)号：US11267987B2

公开(公告)日：2022-03-08

申请号：US16805864

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hung Liao ,  An-Hsuan Lee ,  Shen-Nan Lee ,  Teng-Chun Tsai ,  Chen-Hao Wu ,  Huang-Lin Chao

IPC: C09G1/02 ,  H01L21/8238 ,  H01L21/321 ,  H01L21/306 ,  C09K3/14 ,  C09G1/06 ,  C09G1/00 ,  C09K13/06 ,  C09G1/04 ,  B24B1/00 ,  B24B37/04

Abstract: A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.

公开(公告)号：US20210130650A1

公开(公告)日：2021-05-06

申请号：US16805864

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hung Liao ,  An-Hsuan Lee ,  Shen-Nan Lee ,  Teng-Chun Tsai ,  Chen-Hao Wu ,  Huang-Lin Chao

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/8238

Abstract: A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.

公开(公告)号：US12261055B2

公开(公告)日：2025-03-25

申请号：US17982028

申请日：2022-11-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Hsuan Lee ,  Chun-Hung Liao ,  Chen-Hao Wu ,  Shen-Nan Lee ,  Teng-Chun Tsai ,  Huang-Lin Chao

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/768

Abstract: The method includes receiving a semiconductor device having a first surface and a second surface. The first surface is a top surface including a conductive material exposed thereon; and the second surface is an embedded surface including the conductive material and a dielectric material. The method also includes selecting a first polishing slurry to achieve a first polishing rate of the conductive material in the first polishing slurry and a second polishing rate of the dielectric material in the first polishing slurry. The method further includes selecting a second polishing slurry to achieve a third polishing rate of the conductive material in the second polishing slurry and a fourth polishing rate of the dielectric material in the second polishing slurry. The method additionally includes polishing the first surface with the first polishing slurry until the second surface is exposed; and polishing the second surface with the second polishing slurry.

公开(公告)号：US11525072B2

公开(公告)日：2022-12-13

申请号：US17175986

申请日：2021-02-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Hsuan Lee ,  Shen-Nan Lee ,  Chen-Hao Wu ,  Chun-Hung Liao ,  Teng-Chun Tsai ,  Huang-Lin Chao

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/762

Abstract: A chemical mechanical polishing (CMP) slurry composition includes an oxidant including oxygen, and an abrasive particle having a core structure encapsulated by a shell structure. The core structure includes a first compound and the shell structure includes a second compound different from the first compound, where a diameter of the core structure is greater than a thickness of the shell structure, and where the first compound is configured to react with the oxidant to form a reactive oxygen species.

公开(公告)号：US11495471B2

公开(公告)日：2022-11-08

申请号：US16991975

申请日：2020-08-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Hsuan Lee ,  Chun-Hung Liao ,  Chen-Hao Wu ,  Shen-Nan Lee ,  Teng-Chun Tsai ,  Huang-Lin Chao

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/768

Abstract: A semiconductor substrate has an exposed surface having a compositionally uniform metal, and an embedded surface having the metal and an oxide. The exposed surface is polished using a first slurry including a first abrasive and a first amine-based alkaline until the embedded surface is exposed. The embedded surface is polished using a second slurry including a second abrasive and a second amine-based alkaline. The second abrasive is different from the first abrasive. The second amine-based alkaline is different from the first amine-based alkaline. The metal and the oxide each has a first and a second removal rate in the first slurry, respectively, and a third and fourth removal rate in the second slurry, respectively. A ratio of the first removal rate to the second removal rate is greater than 30:1, and a ratio of the third removal rate to the fourth removal rate is about 1:0.5 to about 1:2.

公开(公告)号：US20210098266A1

公开(公告)日：2021-04-01

申请号：US16991975

申请日：2020-08-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Hsuan Lee ,  Chun-Hung Liao ,  Chen-Hao Wu ,  Shen-Nan Lee ,  Teng-Chun Tsai ,  Huang-Lin Chao

IPC: H01L21/321 ,  H01L21/768 ,  C09G1/02

Abstract: A semiconductor substrate has an exposed surface having a compositionally uniform metal, and an embedded surface having the metal and an oxide. The exposed surface is polished using a first slurry including a first abrasive and a first amine-based alkaline until the embedded surface is exposed. The embedded surface is polished using a second slurry including a second abrasive and a second amine-based alkaline. The second abrasive is different from the first abrasive. The second amine-based alkaline is different from the first amine-based alkaline. The metal and the oxide each has a first and a second removal rate in the first slurry, respectively, and a third and fourth removal rate in the second slurry, respectively. A ratio of the first removal rate to the second removal rate is greater than 30:1, and a ratio of the third removal rate to the fourth removal rate is about 1:0.5 to about 1:2.

公开(公告)号：US10920105B2

公开(公告)日：2021-02-16

申请号：US16456918

申请日：2019-06-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Hsuan Lee ,  Shen-Nan Lee ,  Chen-Hao Wu ,  Chun-Hung Liao ,  Teng-Chun Tsai ,  Huang-Lin Chao

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/762

Abstract: A chemical mechanical polishing (CMP) slurry composition includes an oxidant including oxygen, and an abrasive particle having a core structure encapsulated by a shell structure. The core structure includes a first compound and the shell structure includes a second compound different from the first compound, where a diameter of the core structure is greater than a thickness of the shell structure, and where the first compound is configured to react with the oxidant to form a reactive oxygen species.

公开(公告)号：US11752592B2

公开(公告)日：2023-09-12

申请号：US17377759

申请日：2021-07-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hung Liao ,  Chen-Hao Wu ,  An-Hsuan Lee ,  Huang-Lin Chao

IPC: B24B53/017 ,  B24B57/02

CPC classification number: B24B53/017 ,  B24B57/02

Abstract: The present disclosure describes a method and an apparatus that can enhance the slurry oxidizability for a chemical mechanical polishing (CMP) process. The method can include securing a substrate onto a carrier of a polishing system. The method can further include dispensing, via a feeder of the polishing system, a first slurry towards a polishing pad of the polishing system. The method can further include forming a second slurry by enhancing an oxidizability of the first slurry, and performing a polishing process, with the second slurry, on the substrate.