公开(公告)号：US20190067283A1

公开(公告)日：2019-02-28

申请号：US15688478

申请日：2017-08-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yin WANG ,  Chien-Chih LIN ,  Chien-Tai CHAN ,  Wei-Ken LIN ,  Chun-Te LI

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/417 ,  H01L21/324

Abstract: A fin field-effect transistor (FinFET) structure and a method for forming the same are provided. The FinFET structure includes a first fin structure that protrudes from a first region of a substrate. A second fin structure protrudes from a second region of the substrate. Isolation regions cover lower portions of the first fin structure and the second fin structure and leave upper portions of the first fin structure and the second fin structure above the isolation regions. A first liner layer is positioned between the lower portion of the first fin structure and the isolation regions in the first region. A second liner layer covers the lower portion of the second fin structure and is positioned between the second fin structure and the isolation regions in the second region. The first liner layer and the second liner layer are formed of different materials.