公开(公告)号：US20200091007A1

公开(公告)日：2020-03-19

申请号：US16277326

申请日：2019-02-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chu-An LEE ,  Chen-Hao WU ,  Peng-Chung JANGJIAN ,  Chun-Wen HSIAO ,  Teng-Chun TSAI ,  Huang-Lin CHAO

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having adjacent first and second fins protruding from the substrate, an isolation feature between and adjacent to the first fin and the second fin, and a fin isolation structure between the first fin and the second fin. The fin isolation structure includes a first insulating layer partially embedded in the isolation feature, a second insulating layer having sidewall surfaces and a bottom surface that are covered by the first insulating layer, a first capping layer covering the second insulating layer and having sidewall surfaces that are covered by the first insulating layer, and a second capping layer having sidewall surfaces and a bottom surface that are covered by the first capping layer.