公开(公告)号：US20240186142A1

公开(公告)日：2024-06-06

申请号：US18439340

申请日：2024-02-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Yi Chang ,  Chunyao Wang

IPC: H01L21/027 ,  H01L21/308 ,  H01L21/477 ,  H01L29/66

CPC classification number: H01L21/027 ,  H01L21/3086 ,  H01L21/477 ,  H01L29/66795

Abstract: As deposited, hard mask thin films have internal stress components which are an artifact of the material, thickness, deposition process of the mask layer as well as of the underlying materials and topography. This internal stress can cause distortion and twisting of the mask layer when it is patterned, especially when sub-micron critical dimensions are being patterned. A stress-compensating process is employed to reduce the impact of this internal stress. Heat treatment can be employed to relax the stress, as an example. In another example, a second mask layer with an opposite internal stress component is employed to offset the internal stress component in the hard mask layer.

公开(公告)号：US20220293413A1

公开(公告)日：2022-09-15

申请号：US17341332

申请日：2021-06-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Yi Chang ,  Chunyao Wang

IPC: H01L21/027 ,  H01L29/66 ,  H01L21/308 ,  H01L21/477

Abstract: As deposited, hard mask thin films have internal stress components which are an artifact of the material, thickness, deposition process of the mask layer as well as of the underlying materials and topography. This internal stress can cause distortion and twisting of the mask layer when it is patterned, especially when sub-micron critical dimensions are being patterned. A stress-compensating process is employed to reduce the impact of this internal stress. Heat treatment can be employed to relax the stress, as an example. In another example, a second mask layer with an opposite internal stress component is employed to offset the internal stress component in the hard mask layer.

公开(公告)号：US11935746B2

公开(公告)日：2024-03-19

申请号：US17341332

申请日：2021-06-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Yi Chang ,  Chunyao Wang

IPC: H01L21/027 ,  H01L21/308 ,  H01L21/477 ,  H01L29/66

CPC classification number: H01L21/027 ,  H01L21/3086 ,  H01L21/477 ,  H01L29/66795

Abstract: As deposited, hard mask thin films have internal stress components which are an artifact of the material, thickness, deposition process of the mask layer as well as of the underlying materials and topography. This internal stress can cause distortion and twisting of the mask layer when it is patterned, especially when sub-micron critical dimensions are being patterned. A stress-compensating process is employed to reduce the impact of this internal stress. Heat treatment can be employed to relax the stress, as an example. In another example, a second mask layer with an opposite internal stress component is employed to offset the internal stress component in the hard mask layer.