公开(公告)号：US10526196B2

公开(公告)日：2020-01-07

申请号：US15873937

申请日：2018-01-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Chuan Teng ,  Chun-Yin Tsai ,  Chia-Hua Chu ,  Chun-Wen Cheng

IPC: H01L41/113 ,  B81B3/00 ,  B81C1/00 ,  H04R19/00

Abstract: Structures and formation methods of a semiconductor device structure are provided. A semiconductor device structure includes a first dielectric layer and a second dielectric layer over a semiconductor substrate. A cavity penetrates through the first dielectric layer and the second dielectric layer. The semiconductor device structure also includes a first movable membrane between the first dielectric layer and the second dielectric layer. The first movable membrane is partially exposed through the cavity. The first movable membrane includes first corrugated portions arranged along an edge of the cavity.

公开(公告)号：US10609463B2

公开(公告)日：2020-03-31

申请号：US15797813

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Wen-Cheng Kuo ,  Chia-Hua Chu ,  Chun-Yin Tsai ,  Tzu-Heng Wu

IPC: H04R1/08 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00

Abstract: An integrated microphone device is provided. The integrated microphone device includes a substrate, a plate, and a membrane. The substrate includes an aperture allowing acoustic pressure to pass through. The plate is disposed on a side of the substrate. The membrane is disposed between the substrate and the plate and movable relative to the plate as acoustic pressure strikes the membrane. The membrane includes a vent valve having an open area that is variable in response to a change in acoustic pressure.

公开(公告)号：US11292712B2

公开(公告)日：2022-04-05

申请号：US16731183

申请日：2019-12-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Chuan Teng ,  Chun-Yin Tsai ,  Chia-Hua Chu ,  Chun-Wen Cheng

IPC: H01L41/113 ,  B81B3/00 ,  B81C1/00 ,  H04R19/00

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a first dielectric layer over a substrate and forming a first recess in the first dielectric layer. The method also includes conformally forming a first movable membrane over the first dielectric layer. In addition, the first movable membrane has a first corrugated portion in the first recess. The method further includes forming a second dielectric layer over the first movable membrane and partially removing the substrate, the first dielectric layer, and the second dielectric layer to form a cavity. In addition, the first corrugated portion of the first movable membrane is partially sandwiched between the first dielectric layer and the second dielectric layer.

公开(公告)号：US11184694B2

公开(公告)日：2021-11-23

申请号：US16813923

申请日：2020-03-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Chun-Yin Tsai ,  Tzu-Heng Wu ,  Wen-Cheng Kuo

IPC: H04R1/08 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00

Abstract: An integrated microphone device is provided. The integrated microphone device includes a substrate, a plate, and a membrane. The substrate includes an aperture allowing acoustic pressure to pass through. The plate is disposed on a side of the substrate. The membrane is disposed between the substrate and the plate and movable relative to the plate as acoustic pressure strikes the membrane. The membrane includes a vent valve having an open area that is variable in response to a change in acoustic pressure.

公开(公告)号：US20190135610A1

公开(公告)日：2019-05-09

申请号：US15873937

申请日：2018-01-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Chuan Teng ,  Chun-Yin Tsai ,  Chia-Hua Chu ,  Chun-Wen Cheng

IPC: B81B3/00 ,  B81C1/00

Abstract: Structures and formation methods of a semiconductor device structure are provided. A semiconductor device structure includes a first dielectric layer and a second dielectric layer over a semiconductor substrate. A cavity penetrates through the first dielectric layer and the second dielectric layer. The semiconductor device structure also includes a first movable membrane between the first dielectric layer and the second dielectric layer. The first movable membrane is partially exposed through the cavity. The first movable membrane includes first corrugated portions arranged along an edge of the cavity.