公开(公告)号：US20220352353A1

公开(公告)日：2022-11-03

申请号：US17869704

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Feng-Ching Chu ,  Chung-Chi WEN ,  Wei-Yuan LU ,  Feng-Cheng YANG ,  Yen-Ming CHEN

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/06

Abstract: A method for fabricating a semiconductor device that includes a merged source/drain feature extending between two adjacent fin structures is provided. An air gap is formed under the merged source/drain feature. Forming the epitaxial feature includes growing a first epitaxial feature having a first portion over the first fin structure and a second portion over the second fin structure, growing a second epitaxial feature over the first and second portions of the first epitaxial feature, and growing a third epitaxial feature over the second epitaxial feature. The second epitaxial feature includes a merged portion between the first fin structure and the second fin structure.

公开(公告)号：US20210257482A1

公开(公告)日：2021-08-19

申请号：US16949728

申请日：2020-11-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Feng-Ching CHU ,  Chung-Chi WEN ,  Wei-Yuan LU ,  Feng-Cheng YANG ,  Yen-Ming CHEN

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L21/8234

Abstract: A method for fabricating a semiconductor device that includes a merged source/drain feature extending between two adjacent fin structures. An air gap is formed under the merged source/drain feature. Forming the epitaxial feature includes growing a first epitaxial feature having a first portion over the first fin structure and a second portion over the second fin structure, growing a second epitaxial feature over the first and second portions of the first epitaxial feature, and growing a third epitaxial feature over the second epitaxial feature. The second epitaxial feature includes a merged portion between the first fin structure and the second fin structure.