公开(公告)号：US20210351277A1

公开(公告)日：2021-11-11

申请号：US16872166

申请日：2020-05-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hsin Yang ,  Yen-Ming Chen ,  Feng-Cheng Yang ,  Tsung-Lin Lee ,  Wei-Yang Lee ,  Dian-Han Chen

IPC: H01L29/49 ,  H01L27/092 ,  H01L29/66 ,  H01L21/764 ,  H01L21/8238 ,  G06F30/392

Abstract: A semiconductor device includes a substrate. A gate structure is disposed over the substrate in a vertical direction. The gate structure extends in a first horizontal direction. An air spacer is disposed adjacent to a first portion of the gate structure in a second horizontal direction that is different from the first horizontal direction. The air spacer has a vertical boundary in a cross-sectional side view defined by the vertical direction and the first horizontal direction.