公开(公告)号：US20150028426A1

公开(公告)日：2015-01-29

申请号：US13952753

申请日：2013-07-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Kuo-Cheng Ching ,  Chih-Hao Wang ,  Zhiqiang Wu ,  Gwan Sin Chang

IPC分类号： H01L29/78 ,  H01L29/66

CPC分类号： H01L29/785 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7849

摘要： The present disclosure relates to a Fin field effect transistor (FinFET) device having a buried silicon germanium oxide structure configured to enhance performance of the FinFET device. In some embodiments, the FinFET device has a three-dimensional fin of semiconductor material protruding from a substrate at a position located between first and second isolation regions. A gate structure overlies the three-dimensional fin of semiconductor material. The gate structure controls the flow of charge carriers within the three-dimensional fin of semiconductor material. A buried silicon-germanium-oxide (SiGeOx) structure is disposed within the three-dimensional fin of semiconductor material at a position extending between the first and second isolation regions.

摘要翻译： 本公开涉及具有被配置为增强FinFET器件的性能的掩埋硅锗氧化物结构的Fin场效应晶体管（FinFET）器件。 在一些实施例中，FinFET器件具有在位于第一和第二隔离区域之间的位置处从衬底突出的半导体材料的三维鳍。 栅极结构覆盖半导体材料的三维鳍。 栅极结构控制半导体材料的三维鳍内的电荷载流子的流动。 掩埋的硅 - 锗氧化物（SiGeOx）结构设置在半导体材料的三维翅片内，在第一和第二隔离区域之间延伸的位置。

公开(公告)号：US09202917B2

公开(公告)日：2015-12-01

申请号：US13952753

申请日：2013-07-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Kuo-Cheng Ching ,  Chih-Hao Wang ,  Zhiqiang Wu ,  Gwan Sin Chang

IPC分类号： H01L29/78 ,  H01L29/66

CPC分类号： H01L29/785 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7849

摘要： The present disclosure relates to a Fin field effect transistor (FinFET) device having a buried silicon germanium oxide structure configured to enhance performance of the FinFET device. In some embodiments, the FinFET device has a three-dimensional fin of semiconductor material protruding from a substrate at a position located between first and second isolation regions. A gate structure overlies the three-dimensional fin of semiconductor material. The gate structure controls the flow of charge carriers within the three-dimensional fin of semiconductor material. A buried silicon-germanium-oxide (SiGeOx) structure is disposed within the three-dimensional fin of semiconductor material at a position extending between the first and second isolation regions.

摘要翻译： 本公开涉及具有被配置为增强FinFET器件的性能的掩埋硅锗氧化物结构的Fin场效应晶体管（FinFET）器件。 在一些实施例中，FinFET器件具有在位于第一和第二隔离区域之间的位置处从衬底突出的半导体材料的三维鳍。 栅极结构覆盖半导体材料的三维鳍。 栅极结构控制半导体材料的三维鳍内的电荷载流子的流动。 掩埋的硅 - 锗氧化物（SiGeOx）结构设置在半导体材料的三维翅片内，在第一和第二隔离区域之间延伸的位置。