公开(公告)号：US20190164848A1

公开(公告)日：2019-05-30

申请号：US16047115

申请日：2018-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Han-Pin CHUNG ,  Chih-Tang PENG ,  Tien-I BAO

IPC: H01L21/8238 ,  H01L21/762 ,  H01L21/02 ,  H01L27/092

Abstract: A semiconductor structure and a method for forming the same are provided. The method includes forming a first insulation material layer in a portion of a trench between a first protruding structure and a second protruding structure over a substrate and performing a pre-treatment process on the first insulation material layer. The method further includes performing a first insulation material conversion process on the first insulation material layer and forming a second insulation material layer covering the first insulation material layer in the trench. In addition, a first distance between upper portions of the first protruding structure and the second protruding structure before performing the first insulation material conversion process is different from a second distance between the upper portions of the first protruding structure and the second protruding structure after performing the first insulation material conversion process.

公开(公告)号：US20190131186A1

公开(公告)日：2019-05-02

申请号：US15901982

申请日：2018-02-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Han-Pin CHUNG ,  Jian-Shiou HUANG

IPC: H01L21/8238 ,  H01L21/762 ,  H01L27/092 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161

Abstract: A semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a first fin structure protruding from the first region of the semiconductor substrate and having a first portion and a second portion over the first portion. The semiconductor device structure also includes a liner structure including a first insulating liner layer and second insulating liner layer. The first insulating liner layer has a bottom portion covering the semiconductor substrate and a sidewall portion covering a sidewall of the first portion of the first fin structure. The second insulating liner layer is over the bottom portion and the sidewall portion of the first insulating liner layer and extends on a top surface of the sidewall portion of the first insulating liner layer. The semiconductor device structure also includes an isolation feature over the liner structure.

公开(公告)号：US20200052081A1

公开(公告)日：2020-02-13

申请号：US16102468

申请日：2018-08-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Han-Pin CHUNG

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: A method of fabricating a semiconductor device includes forming a plurality of semiconductor fins on a substrate. A liner layer is deposited on the semiconductor fins and on the substrate conformally. The semiconductor fins are patterned to form a plurality of active regions on the substrate after the liner layer is deposited.