公开(公告)号：US12040233B2

公开(公告)日：2024-07-16

申请号：US17329998

申请日：2021-05-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Meng Jhe Tsai ,  Hong-Jie Yang ,  Meng-Chun Chang ,  Hao Chiang ,  Chia-Ying Lee ,  Huan-Just Lin ,  Chuan Chang

IPC分类号： H01L21/82 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/823431 ,  H01L27/0924 ,  H01L29/66795 ,  H01L29/7851

摘要： A method of forming a semiconductor device includes: forming a metal gate structure over a fin that protrudes above a substrate, the metal gate structure being surrounded by an interlayer dielectric (ILD) layer; recessing the metal gate structure below an upper surface of the ILD layer distal from the substrate; after the recessing, forming a first dielectric layer over the recessed metal gate structure; forming an etch stop layer (ESL) over the first dielectric layer and the ILD layer; forming a second dielectric layer over the ESL; performing a first dry etch process to form an opening that extends through the second dielectric layer, through the ESL, and into the first dielectric layer; after the first dry etch process, performing a wet etch process to clean the opening; and after the wet etch process, performing a second dry etch process to extend the opening through the first dielectric layer.

公开(公告)号：US20220293471A1

公开(公告)日：2022-09-15

申请号：US17329998

申请日：2021-05-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Meng Jhe Tsai ,  Hong-Jie Yang ,  Meng-Chun Chang ,  Hao Chiang ,  Chia-Ying Lee ,  Huan-Just Lin ,  Chuan Chang

IPC分类号： H01L21/8234 ,  H01L29/66 ,  H01L27/092 ,  H01L29/78

摘要： A method of forming a semiconductor device includes: forming a metal gate structure over a fin that protrudes above a substrate, the metal gate structure being surrounded by an interlayer dielectric (ILD) layer; recessing the metal gate structure below an upper surface of the ILD layer distal from the substrate; after the recessing, forming a first dielectric layer over the recessed metal gate structure; forming an etch stop layer (ESL) over the first dielectric layer and the ILD layer; forming a second dielectric layer over the ESL; performing a first dry etch process to form an opening that extends through the second dielectric layer, through the ESL, and into the first dielectric layer; after the first dry etch process, performing a wet etch process to clean the opening; and after the wet etch process, performing a second dry etch process to extend the opening through the first dielectric layer.

公开(公告)号：US20240332085A1

公开(公告)日：2024-10-03

申请号：US18741063

申请日：2024-06-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Meng Jhe Tsai ,  Hong-Jie Yang ,  Meng-Chun Chang ,  Hao Chiang ,  Chia-Ying Lee ,  Huan-Just Lin ,  Chuan Chang

IPC分类号： H01L21/8234 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/823431 ,  H01L27/0924 ,  H01L29/66795 ,  H01L29/7851

摘要： A method of forming a semiconductor device includes: forming a metal gate structure over a fin that protrudes above a substrate, the metal gate structure being surrounded by an interlayer dielectric (ILD) layer; recessing the metal gate structure below an upper surface of the ILD layer distal from the substrate; after the recessing, forming a first dielectric layer over the recessed metal gate structure; forming an etch stop layer (ESL) over the first dielectric layer and the ILD layer; forming a second dielectric layer over the ESL; performing a first dry etch process to form an opening that extends through the second dielectric layer, through the ESL, and into the first dielectric layer; after the first dry etch process, performing a wet etch process to clean the opening; and after the wet etch process, performing a second dry etch process to extend the opening through the first dielectric layer.