公开(公告)号：US11210447B2

公开(公告)日：2021-12-28

申请号：US16414488

申请日：2019-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiefeng Jeff Lin ,  Chih-Yung Lin ,  Dian-Sheg Yu ,  Hsiao-Lan Yang ,  Jhon Jhy Liaw

IPC: H01L27/088 ,  G06F30/398 ,  H01L29/78 ,  H01L21/8234 ,  H01L23/522

Abstract: The first type of semiconductor device includes a first fin structure extending in a first direction, a first gate, and a first slot contact disposed over the first fin structure. The first gate extends in a second direction and has a first gate dimension measured in the first direction. The first slot contact has a first slot contact dimension measured in the first direction. A second type of semiconductor device includes: a second fin structure extending in a third direction, a second gate, and a second slot contact disposed over the second fin structure. The second gate extends in a fourth direction and has a second gate dimension measured in the third direction. The second slot contact has a second slot contact dimension measured in the third direction. The second slot contact dimension is greater than the second gate dimension and greater than the first slot contact dimension.

公开(公告)号：US10790352B2

公开(公告)日：2020-09-29

申请号：US16021662

申请日：2018-06-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiefeng Lin ,  Hsiao-Lan Yang ,  Chih-Yung Lin

IPC: H01L49/02 ,  H01L29/06 ,  H01L23/528 ,  H01L23/522 ,  H01L21/8234 ,  H01L21/768 ,  H01L27/06 ,  H01L21/762 ,  H01L21/3105 ,  H01L29/78

Abstract: A first and a second gate structure each extend in a first direction. A first and a second conductive contact extend in the first direction and are separated from the first and second gate structures in a second direction. A first isolation structure extends in the second direction and separates the first gate structure from the second gate structure. A second isolation structure extends in the second direction and separates the first conductive contact from the second conductive contact. The first gate structure is electrically coupled to a first electrical node. The second gate structure is electrically coupled to a second electrical node different from the first electrical node. The first conductive contact is electrically coupled to the second electrical node. The second conductive contact is electrically coupled to the first electrical node.

公开(公告)号：US11728373B2

公开(公告)日：2023-08-15

申请号：US17034459

申请日：2020-09-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiefeng Lin ,  Hsiao-Lan Yang ,  Chih-Yung Lin

IPC: H01L21/762 ,  H01L49/02 ,  H01L29/06 ,  H01L23/528 ,  H01L23/522 ,  H01L21/8234 ,  H01L21/768 ,  H01L27/06 ,  H01L21/3105 ,  H01L29/78

CPC classification number: H01L28/60 ,  H01L21/76224 ,  H01L21/76897 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/528 ,  H01L23/5226 ,  H01L27/0629 ,  H01L29/0649 ,  H01L21/31053 ,  H01L29/785

Abstract: A first and a second gate structure each extend in a first direction. A first and a second conductive contact extend in the first direction and are separated from the first and second gate structures in a second direction. A first isolation structure extends in the second direction and separates the first gate structure from the second gate structure. A second isolation structure extends in the second direction and separates the first conductive contact from the second conductive contact. The first gate structure is electrically coupled to a first electrical node. The second gate structure is electrically coupled to a second electrical node different from the first electrical node. The first conductive contact is electrically coupled to the second electrical node. The second conductive contact is electrically coupled to the first electrical node.

公开(公告)号：US20230369387A1

公开(公告)日：2023-11-16

申请号：US18355072

申请日：2023-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiefeng Lin ,  Hsiao-Lan Yang ,  Chih-Yung Lin

IPC: H01G4/228 ,  H01L21/8234 ,  H01L27/06 ,  H01L21/762 ,  H01L29/06 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  H01L21/3105 ,  H01L29/78

CPC classification number: H01L28/60 ,  H01L21/823481 ,  H01L21/823437 ,  H01L21/823475 ,  H01L27/0629 ,  H01L21/823431 ,  H01L21/76224 ,  H01L29/0649 ,  H01L23/5226 ,  H01L21/76897 ,  H01L23/528 ,  H01L21/31053 ,  H01L29/785

Abstract: A first and a second gate structure each extend in a first direction. A first and a second conductive contact extend in the first direction and are separated from the first and second gate structures in a second direction. A first isolation structure extends in the second direction and separates the first gate structure from the second gate structure. A second isolation structure extends in the second direction and separates the first conductive contact from the second conductive contact. The first gate structure is electrically coupled to a first electrical node. The second gate structure is electrically coupled to a second electrical node different from the first electrical node. The first conductive contact is electrically coupled to the second electrical node. The second conductive contact is electrically coupled to the first electrical node.

公开(公告)号：US20210013300A1

公开(公告)日：2021-01-14

申请号：US17034459

申请日：2020-09-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiefeng Lin ,  Hsiao-Lan Yang ,  Chih-Yung Lin

IPC: H01L49/02 ,  H01L29/06 ,  H01L23/528 ,  H01L23/522 ,  H01L21/8234 ,  H01L21/768 ,  H01L27/06 ,  H01L21/762

Abstract: A first and a second gate structure each extend in a first direction. A first and a second conductive contact extend in the first direction and are separated from the first and second gate structures in a second direction. A first isolation structure extends in the second direction and separates the first gate structure from the second gate structure. A second isolation structure extends in the second direction and separates the first conductive contact from the second conductive contact. The first gate structure is electrically coupled to a first electrical node. The second gate structure is electrically coupled to a second electrical node different from the first electrical node. The first conductive contact is electrically coupled to the second electrical node. The second conductive contact is electrically coupled to the first electrical node.

公开(公告)号：US20200097632A1

公开(公告)日：2020-03-26

申请号：US16414488

申请日：2019-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiefeng Jeff Lin ,  Chih-Yung Lin ,  Dian-Sheg Yu ,  Hsiao-Lan Yang ,  Jhon Jhy Liaw

IPC: G06F17/50 ,  H01L27/088 ,  H01L29/78 ,  H01L23/522 ,  H01L21/8234

Abstract: The first type of semiconductor device includes a first fin structure extending in a first direction, a first gate, and a first slot contact disposed over the first fin structure. The first gate extends in a second direction and has a first gate dimension measured in the first direction. The first slot contact has a first slot contact dimension measured in the first direction. A second type of semiconductor device includes: a second fin structure extending in a third direction, a second gate, and a second slot contact disposed over the second fin structure. The second gate extends in a fourth direction and has a second gate dimension measured in the third direction. The second slot contact has a second slot contact dimension measured in the third direction. The second slot contact dimension is greater than the second gate dimension and greater than the first slot contact dimension.

公开(公告)号：US20200006467A1

公开(公告)日：2020-01-02

申请号：US16021662

申请日：2018-06-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jiefeng Lin ,  Hsiao-Lan Yang ,  Chih-Yung Lin

IPC: H01L49/02 ,  H01L29/06 ,  H01L23/528 ,  H01L23/522 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/768 ,  H01L27/06

Abstract: A first and a second gate structure each extend in a first direction. A first and a second conductive contact extend in the first direction and are separated from the first and second gate structures in a second direction. A first isolation structure extends in the second direction and separates the first gate structure from the second gate structure. A second isolation structure extends in the second direction and separates the first conductive contact from the second conductive contact. The first gate structure is electrically coupled to a first electrical node. The second gate structure is electrically coupled to a second electrical node different from the first electrical node. The first conductive contact is electrically coupled to the second electrical node. The second conductive contact is electrically coupled to the first electrical node.