公开(公告)号：US20210233945A1

公开(公告)日：2021-07-29

申请号：US17231223

申请日：2021-04-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Wen Hsu ,  Jiech-Fun Lu ,  Yeur-Luen Tu ,  U-Ting Chen ,  Shu-Ting Tsai ,  Hsiu-Yu Cheng

IPC: H01L27/146

Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A device includes a substrate and a plurality of photosensitive regions in the substrate. The substrate has a first side and a second side opposite to the first side. The device further includes an interconnect structure on the first side of the substrate, and a plurality of recesses on the second side of the substrate. The plurality of recesses extend into a semiconductor material of the substrate.

公开(公告)号：US20210066357A1

公开(公告)日：2021-03-04

申请号：US17095994

申请日：2020-11-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Wen Hsu ,  Jieh-Fun Lu ,  Yeur-Luen Tu ,  U-Ting Chen ,  Shu-Ting Tsai ,  Hsiu-Yu Cheng

IPC: H01L27/146

Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.

公开(公告)号：US11315972B2

公开(公告)日：2022-04-26

申请号：US17095994

申请日：2020-11-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Wen Hsu ,  Jiech-Fun Lu ,  Yeur-Luen Tu ,  U-Ting Chen ,  Shu-Ting Tsai ,  Hsiu-Yu Cheng

IPC: H01L27/14 ,  H01L27/146

Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.