公开(公告)号：US11596800B2

公开(公告)日：2023-03-07

申请号：US16901884

申请日：2020-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Ting Tsai ,  Jeng-Shyan Lin ,  Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung

IPC: H01L25/00 ,  H01L27/06 ,  H01L27/146 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532 ,  A61N1/39

Abstract: A semiconductor device comprises a first chip bonded on a second chip. The first chip comprises a first substrate and first interconnection components formed in first IMD layers. The second chip comprises a second substrate and second interconnection components formed in second IMD layers. The device further comprises a first conductive plug formed within the first substrate and the first IMD layers, wherein the first conductive plug is coupled to a first interconnection component and a second conductive plug formed through the first substrate and the first IMD layers and formed partially through the second IMD layers, wherein the second conductive plug is coupled to a second interconnection component.

公开(公告)号：US11315972B2

公开(公告)日：2022-04-26

申请号：US17095994

申请日：2020-11-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Wen Hsu ,  Jiech-Fun Lu ,  Yeur-Luen Tu ,  U-Ting Chen ,  Shu-Ting Tsai ,  Hsiu-Yu Cheng

IPC: H01L27/14 ,  H01L27/146

Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.

公开(公告)号：US20230378139A1

公开(公告)日：2023-11-23

申请号：US18359311

申请日：2023-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Ting Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Chia-Chieh Lin ,  U-Ting Chen

IPC: H01L25/065 ,  H01L25/00 ,  H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L25/0657 ,  H01L25/50 ,  H01L23/481 ,  H01L24/92 ,  H01L21/76898 ,  H01L2224/821 ,  H01L2224/82106 ,  H01L2224/24145 ,  H01L21/76831 ,  H01L2224/9212 ,  H01L23/53223 ,  H01L2224/80896 ,  H01L2224/8203 ,  H01L24/80 ,  H01L23/53238 ,  H01L2224/9202 ,  H01L24/82 ,  H01L2924/0002 ,  H01L21/76805 ,  H01L2225/06541 ,  H01L23/53266

Abstract: An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two integrated circuits are bonded together. A first opening is formed through one of the substrates. A multi-layer dielectric film is formed along sidewalls and a bottom of the first opening. A second opening is formed extending from the first opening to pads in the integrated circuits. A dielectric liner is formed, and the opening is filled with a conductive material to form a conductive plug.

公开(公告)号：US11018177B2

公开(公告)日：2021-05-25

申请号：US16556654

申请日：2019-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jeng-Shyan Lin ,  Shu-Ting Tsai ,  Tzu-Hsuan Hsu

IPC: H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a photodetector disposed in a semiconductor substrate. An interlayer dielectric (ILD) structure is disposed on a first side of the semiconductor substrate. A storage node is disposed in the semiconductor substrate and spaced from the photodetector, where the storage node is spaced from the first side by a first distance. A first isolation structure is disposed in the semiconductor substrate and between the photodetector and the storage node, where the first isolation structure extends into the semiconductor substrate from a second side of the semiconductor substrate that is opposite the first side, and where the first isolation structure is spaced from the first side by a second distance that is less than the first distance.

公开(公告)号：US20210233945A1

公开(公告)日：2021-07-29

申请号：US17231223

申请日：2021-04-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Wen Hsu ,  Jiech-Fun Lu ,  Yeur-Luen Tu ,  U-Ting Chen ,  Shu-Ting Tsai ,  Hsiu-Yu Cheng

IPC: H01L27/146

Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A device includes a substrate and a plurality of photosensitive regions in the substrate. The substrate has a first side and a second side opposite to the first side. The device further includes an interconnect structure on the first side of the substrate, and a plurality of recesses on the second side of the substrate. The plurality of recesses extend into a semiconductor material of the substrate.

公开(公告)号：US20210066357A1

公开(公告)日：2021-03-04

申请号：US17095994

申请日：2020-11-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Wen Hsu ,  Jieh-Fun Lu ,  Yeur-Luen Tu ,  U-Ting Chen ,  Shu-Ting Tsai ,  Hsiu-Yu Cheng

IPC: H01L27/146

Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.

公开(公告)号：US20220208749A1

公开(公告)日：2022-06-30

申请号：US17696565

申请日：2022-03-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Ting Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Szu-Ying Chen ,  U-Ting Chen

IPC: H01L25/00 ,  H01L25/065 ,  H01L23/48 ,  H01L21/768 ,  H01L23/00

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first semiconductor chip including a first substrate and a first conductive feature formed over the first substrate, and a second semiconductor chip bonded to the first semiconductor chip. The second semiconductor chip includes a second substrate and a second conductive feature formed over the second substrate. A conductive plug is disposed through the first conductive feature and is coupled to the second conductive feature. The conductive plug includes a first portion disposed over the first conductive feature, the first portion having a first width, and a second portion disposed beneath or within the first conductive feature. The second portion has a second width. The first width is greater than the second width.

公开(公告)号：US20210272989A1

公开(公告)日：2021-09-02

申请号：US17324373

申请日：2021-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jeng-Shyan Lin ,  Shu-Ting Tsai ,  Tzu-Hsuan Hsu

IPC: H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a photodetector disposed in a semiconductor substrate. An interlayer dielectric (ILD) structure is disposed on a first side of the semiconductor substrate. A storage node is disposed in the semiconductor substrate and spaced from the photodetector, where the storage node is spaced from the first side by a first distance. A first isolation structure is disposed in the semiconductor substrate and between the photodetector and the storage node, where the first isolation structure extends into the semiconductor substrate from a second side of the semiconductor substrate that is opposite the first side, and where the first isolation structure is spaced from the first side by a second distance that is less than the first distance.

公开(公告)号：US11769781B2

公开(公告)日：2023-09-26

申请号：US17324373

申请日：2021-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jeng-Shyan Lin ,  Shu-Ting Tsai ,  Tzu-Hsuan Hsu

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/1463 ,  H01L27/14616 ,  H01L27/14627 ,  H01L27/14636

Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a photodetector disposed in a semiconductor substrate. An interlayer dielectric (ILD) structure is disposed on a first side of the semiconductor substrate. A storage node is disposed in the semiconductor substrate and spaced from the photodetector, where the storage node is spaced from the first side by a first distance. A first isolation structure is disposed in the semiconductor substrate and between the photodetector and the storage node, where the first isolation structure extends into the semiconductor substrate from a second side of the semiconductor substrate that is opposite the first side, and where the first isolation structure is spaced from the first side by a second distance that is less than the first distance.

公开(公告)号：US20230201613A1

公开(公告)日：2023-06-29

申请号：US18178732

申请日：2023-03-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Ting Tsai ,  Jeng-Shyan Lin ,  Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung

IPC: A61N1/39 ,  H01L25/00 ,  H01L27/06 ,  H01L27/146 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: A61N1/3931 ,  H01L25/50 ,  H01L27/0688 ,  H01L27/14634 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53238 ,  A61N1/3987 ,  H01L2224/80894 ,  H01L2224/08145 ,  H01L2224/80896 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2924/1431 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L23/53257 ,  H01L2224/9212

Abstract: A semiconductor device comprises a first chip bonded on a second chip. The first chip comprises a first substrate and first interconnection components formed in first IMD layers. The second chip comprises a second substrate and second interconnection components formed in second IMD layers. The device further comprises a first conductive plug formed within the first substrate and the first IMD layers, wherein the first conductive plug is coupled to a first interconnection component and a second conductive plug formed through the first substrate and the first IMD layers and formed partially through the second IMD layers, wherein the second conductive plug is coupled to a second interconnection component.