公开(公告)号：US11342372B2

公开(公告)日：2022-05-24

申请号：US16924538

申请日：2020-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Fang ,  Ming-Chi Wu ,  Ji-Heng Jiang ,  Chi-Yuan Wen ,  Chien-Nan Tu ,  Yu-Lung Yeh ,  Shih-Shiung Chen ,  Kun-Yu Lin

IPC: H01L31/0232 ,  H01L27/146

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first side, a second side opposite to the first side, and at least one light-sensing region close to the first side. The image sensor device includes a dielectric feature covering the second side and extending into the semiconductor substrate. The dielectric feature in the semiconductor substrate surrounds the light-sensing region. The image sensor device includes a reflective layer in the dielectric feature in the semiconductor substrate, wherein a top portion of the reflective layer protrudes away from the second side, and a top surface of the reflective layer and a top surface of the insulating layer are substantially coplanar.

公开(公告)号：US10056427B1

公开(公告)日：2018-08-21

申请号：US15609384

申请日：2017-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ji-Heng Jiang ,  Ming-Chi Wu ,  Chi-Yuan Wen ,  Chien-Nan Tu ,  Yu-Lung Yeh

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636

Abstract: An FSI image sensor device structure is provided. The FSI image sensor device structure includes a substrate and a barrier structure formed in the substrate. The barrier structure includes a plurality of protrusion portions and a plurality of pillar portions. Each of the protrusion portions has a first height, and each of the pillar portions has a second height that is greater than the first height. The FSI image sensor device structure includes a pixel region formed over the protrusion portions and a storage region formed over the protrusion portions, wherein the pillar portions surround the pixel region.

公开(公告)号：US10734427B2

公开(公告)日：2020-08-04

申请号：US16277375

申请日：2019-02-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Fang ,  Ming-Chi Wu ,  Ji-Heng Jiang ,  Chi-Yuan Wen ,  Chien-Nan Tu ,  Yu-Lung Yeh ,  Shih-Shiung Chen ,  Kun-Yu Lin

IPC: H01L31/0232 ,  H01L27/146

Abstract: A method for forming an image sensor device is provided. The method includes providing a semiconductor substrate including a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The method includes forming an insulating layer over the back surface and in the first trench. A void is formed in the insulating layer in the first trench, and the void is closed. The method includes removing the insulating layer over the void to open up the void. The opened void forms a second trench partially in the first trench. The method includes filling a reflective structure in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

公开(公告)号：US10211244B2

公开(公告)日：2019-02-19

申请号：US15638971

申请日：2017-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Fang ,  Ming-Chi Wu ,  Ji-Heng Jiang ,  Chi-Yuan Wen ,  Chien-Nan Tu ,  Yu-Lung Yeh ,  Shih-Shiung Chen ,  Kun-Yu Lin

IPC: H01L31/0232 ,  H01L27/146

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The first trench has an inner wall and a bottom surface. The image sensor device includes an insulating layer covering the back surface, the inner wall, and the bottom surface. A thickness of a first upper portion of the insulating layer in the first trench increases in a direction away from the front surface, and the insulating layer has a second trench partially in the first trench. The image sensor device includes a reflective structure filled in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.