中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

27 records (took 0.021 seconds)

    QE approach by double-side, multi absorption structure
    1.
    发明授权
    QE approach by double-side, multi absorption structure 有权

    公开(公告)号：US10553733B2

    公开(公告)日：2020-02-04

    申请号：US15716714

    申请日：2017-09-27

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Po-Han Huang ,  Chien Nan Tu ,  Chi-Yuan Wen ,  Ming-Chi Wu ,  Yu-Lung Yeh ,  Hsin-Yi Kuo

    IPC: H01L31/0232 ,  H01L27/146 ,  H01L27/30 ,  H01L31/02 ,  H01L31/0224

    Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

    Integrated fabrication of semiconductor devices
    2.
    发明授权
    Integrated fabrication of semiconductor devices 有权
    半导体器件的集成制造

    公开(公告)号：US09502556B2

    公开(公告)日：2016-11-22

    申请号：US14321508

    申请日：2014-07-01

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Ming-Chi Wu ,  Yu-Lung Yeh ,  Chieh-Shuo Liang ,  Shih-Chang Lin ,  Meng-Yi Wu ,  Hsing-Chih Lin

    IPC: H01L27/06 ,  H01L29/78 ,  H01L29/66 ,  H01L49/02 ,  H01L29/8605 ,  H01L21/8234

    CPC classification number: H01L29/7833 ,  H01L21/823462 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/66166 ,  H01L29/66492 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/8605

    Abstract: In a method for manufacturing a semiconductor device, a substrate including a gate structure is provided. A source region and a drain region are formed at opposing sides of the gate structure and an implant region for a resistor device is formed in the substrate. Pocket implant regions are formed in the source region and the drain region. A dielectric layer is formed to cover the gate structure and the substrate. A portion of dopants in the pocket implant regions interact with portions of dopants in the source region and the drain region to form lightly doped drain regions above the pocket implant regions. A resistor region of the resistor device is defined on the implant region. A portion of the dielectric layer is removed to form a spacer on a sidewall of the gate structure and a resistor protection dielectric layer on a portion of the implant region.

    Abstract translation: 在制造半导体器件的方法中，提供了包括栅极结构的衬底。 源极区域和漏极区域形成在栅极结构的相对侧，并且在衬底中形成用于电阻器件的注入区域。 在源极区域和漏极区域中形成袋状注入区域。 形成介电层以覆盖栅极结构和衬底。 口袋注入区域中的一部分掺杂剂与源区域和漏区域中的掺杂剂的部分相互作用以在口袋注入区域上方形成轻掺杂的漏极区域。 电阻器件的电阻器区域被限定在植入区域上。 去除电介质层的一部分以在栅极结构的侧壁上形成间隔物，并在植入区域的一部分上形成电阻器保护电介质层。

    IMAGE SENSOR WITH AN ABSORPTION ENHANCEMENT SEMICONDUCTOR LAYER
    3.
    发明申请
    IMAGE SENSOR WITH AN ABSORPTION ENHANCEMENT SEMICONDUCTOR LAYER 审中-公开

    公开(公告)号：US20190148570A1

    公开(公告)日：2019-05-16

    申请号：US15877535

    申请日：2018-01-23

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Ming-Chi Wu ,  Chien Nan Tu ,  Kun-Yu Lin ,  Shih-Shiung Chen

    IPC: H01L31/0236 ,  H01L27/146 ,  H01L31/028 ,  H01L31/109 ,  H01L31/18

    Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.

    Image sensor with an absorption enhancement semiconductor layer
    8.
    发明授权
    Image sensor with an absorption enhancement semiconductor layer 有权

    公开(公告)号：US10861989B2

    公开(公告)日：2020-12-08

    申请号：US16682278

    申请日：2019-11-13

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Ming-Chi Wu ,  Chien Nan Tu ,  Kun-Yu Lin ,  Shih-Shiung Chen

    IPC: H01L31/18 ,  H01L31/0236 ,  H01L31/028 ,  H01L27/146 ,  H01L31/109 ,  H01L31/0232

    Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.

    Image sensor with an absorption enhancement semiconductor layer
    9.
    发明授权
    Image sensor with an absorption enhancement semiconductor layer 有权

    公开(公告)号：US10861988B2

    公开(公告)日：2020-12-08

    申请号：US16682245

    申请日：2019-11-13

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Ming-Chi Wu ,  Chien Nan Tu ,  Kun-Yu Lin ,  Shih-Shiung Chen

    IPC: H01L27/146 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/18 ,  H01L31/109 ,  H01L31/0232

    Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.

Patent Agency Ranking