公开(公告)号：US20180350614A1

公开(公告)日：2018-12-06

申请号：US15686995

申请日：2017-08-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Han-Wen Liao ,  Jun Xiu Liu ,  Chun-Chih Lin

IPC: H01L21/306 ,  H01L21/67 ,  H01L21/76

Abstract: Methods for enhancing a surface topography of a structure formed on a substrate are provided. In one example, the method includes performing a polishing process on a substrate having a shallow trench isolation structure and a diffusion region, performing a surface topography enhancing process to enlarge a defect in at least one of the shallow trench isolation structure and the diffusion region, inspecting at least one of the shallow trench isolation structure and the diffusion region to detect the enlarged defect, and adjusting a parameter of the polishing process in response to detecting the enlarged defect.