DIELECTRIC STRUCTURE FOR HIGH SPEED INTERCONNECT AND RELIABILITY ENHANCEMENT

    公开(公告)号:US20250118690A1

    公开(公告)日:2025-04-10

    申请号:US18482122

    申请日:2023-10-06

    Abstract: A semiconductor package includes: a die having a conductive pad at a first side of the die; and a redistribution structure over the first side of the die and electrically coupled to the die. The redistribution structure includes: a first dielectric layer including a first dielectric material; a first via in the first dielectric layer, where the first via is electrically coupled to the conductive pad of the die; and a first dielectric structure embedded in the first dielectric layer, where the first dielectric structure includes a second dielectric material different from the first dielectric material, where the first dielectric structure laterally surrounds the first via and contacts sidewalls of the first via.

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