公开(公告)号：US20210280577A1

公开(公告)日：2021-09-09

申请号：US17316155

申请日：2021-05-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Huan Chen ,  Kong-Beng Thei ,  Fu-Jier Fan ,  Ker-Hsiao Huo ,  Kau-Chu Lin ,  Li-Hsuan Yeh ,  Szu-Hsien Liu ,  Yi-Sheng Chen

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/423 ,  H01L27/092

Abstract: A method includes forming an isolation region extending into a semiconductor substrate, etching a top portion of the isolation region to form a recess in the isolation region, and forming a gate stack extending into the recess and overlapping a lower portion of the isolation region. A source region and a drain region are formed on opposite sides of the gate stack. The gate stack, the source region, and the drain region are parts of a Metal-Oxide-Semiconductor (MOS) device.