公开(公告)号：US20230189657A1

公开(公告)日：2023-06-15

申请号：US17725146

申请日：2022-04-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Harry-HakLay Chuang ,  Hung Cho Wang ,  Sheng-Huang Huang ,  Hung-Yu Chang ,  Keng-Ming Kuo

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L27/222 ,  H01L43/02 ,  H01L43/12

Abstract: Improved methods of patterning magnetic tunnel junctions (MTJs) for magnetoresistive random-access memory (MRAM) and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes depositing a bottom electrode layer over a semiconductor substrate; depositing an MTJ film stack over the bottom electrode layer; depositing a top electrode layer over the MTJ film stack; patterning the top electrode layer; performing a first etch process to pattern the MTJ film stack; performing a first trim process on the MTJ film stack; after performing the first trim process, depositing a first spacer layer over the MTJ film stack; and after depositing the first spacer layer, performing a second etch process to pattern the first spacer layer, the MTJ film stack, and the bottom electrode layer to form an MRAM cell.