公开(公告)号：US20030209050A1

公开(公告)日：2003-11-13

申请号：US10140734

申请日：2002-05-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lu-Chang Chen ,  Yu-Chun Peng ,  Yi-Yao Tang

IPC: B23Q017/00 ,  G01W001/18

CPC classification number: H01L21/682 ,  H01J37/3171 ,  H01J2237/30433 ,  Y10T29/49027 ,  Y10T29/49036 ,  Y10T29/4978 ,  Y10T29/53022 ,  Y10T29/5313 ,  Y10T29/53165 ,  Y10T29/53265

Abstract: An apparatus and a method for calibrating the position of a wafer platform in an ion implanter, and particularly in a medium current ion implanter. The apparatus is constructed by a curvilinear piece formed in a half-circular shape, a pair of linear rods for supporting the curvilinear piece, and at least one cross-bracing rod connected in-between the pair of linear rods for providing rigidity of the apparatus. When the inside peripheral surface of the curvilinear piece intimately engages an outside peripheral surface of the wafer platform of the ion implanter, or when the first and second linear rods fit snugly on the implanter indicative that the wafer platform is properly calibrated at a zero-angle position. When such fitting is not possible, the wafer platform is then adjusted until a snug fitting is made possible.

Abstract translation: 用于校准离子注入机中的晶片平台的位置，特别是在中等电流离子注入机中的装置和方法。 该装置由形成为半圆形的曲线构件，用于支撑曲线构件的一对直线杆和连接在一对线性杆之间的至少一个交叉支撑杆构成，用于提供装置的刚性 。 当曲线件的内周面与离子注入机的晶片平台的外周表面紧密接合时，或者当第一和第二线性杆紧密地配合在注入器上时，指示晶片平台被正确地校准为零角度 位置。 当不可能进行这种装配时，则调整晶片平台直到使贴合件成为可能。

公开(公告)号：US20030030006A1

公开(公告)日：2003-02-13

申请号：US09927959

申请日：2001-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lu-Chang Chen

IPC: G01T001/18 ,  H01J047/02

CPC classification number: H01J37/08 ,  H01J2237/31701

Abstract: A gaseous supply system and method for operating the same is disclosed for supplying at least one gaseous source material to an ion source chamber for use with an ion implanter including at least one gas supply module in gaseous communication with an ion source chamber including at least one pneumatic valve to control the delivery of at least one gaseous source material to the ion source chamber for generation of source material ions for implantation including a driver gas source in communication with said at least one pneumatic valve for operating the at least one pneumatic valve said driver gas source having a different atomic mass unit than the source material ions for implantation generated from the at least one gaseous source material.

Abstract translation: 公开了一种用于操作该气体供应系统和气体供应系统的方法，用于将至少一种气态源材料供应到离子源室以与离子注入机一起使用，所述离子注入机包括至少一个与离子源室气态连通的气体供应模块，所述气体供应模块包括至少一个 气动阀以控制至少一种气态源材料输送到离子源室，用于产生用于注入的源材料离子，包括与所述至少一个气动阀连通的驱动器气体源，用于操作至少一个气动阀所述驱动器 气体源具有与从至少一种气态源材料产生的用于注入的源材料离子不同的原子质量单位。