公开(公告)号：US10672681B2

公开(公告)日：2020-06-02

申请号：US15965989

申请日：2018-04-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Chang Lin ,  Hsin-Yu Pan ,  Lipu Kris Chuang ,  Ming-Chang Lu

IPC: H01L23/373 ,  H01L25/10 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L25/065

Abstract: Semiconductor packages are provided. One of the semiconductor packages includes a first sub-package and a second sub-package. The first sub-package includes a first die, a graphite oxide layer on the first die and an encapsulant encapsulating the first die and the graphite oxide layer. The second sub-package is stacked on and electrically connected to the first sub-package, and includes a second die. The graphite oxide layer is disposed between the first die and the second die.

公开(公告)号：US20190333836A1

公开(公告)日：2019-10-31

申请号：US15965989

申请日：2018-04-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Chang Lin ,  Hsin-Yu Pan ,  Lipu Kris Chuang ,  Ming-Chang Lu

IPC: H01L23/373 ,  H01L25/10 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L25/065

Abstract: Semiconductor packages are provided. One of the semiconductor packages includes a first sub-package and a second sub-package. The first sub-package includes a first die, a graphite oxide layer on the first die and an encapsulant encapsulating the first die and the graphite oxide layer. The second sub-package is stacked on and electrically connected to the first sub-package, and includes a second die. The graphite oxide layer is disposed between the first die and the second die.