公开(公告)号：US20220359436A1

公开(公告)日：2022-11-10

申请号：US17869080

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung Wei Cheng ,  Hai-Ming Chen ,  Chien-Hsun Lee ,  Hao-Cheng Hou ,  Hung-Jen Lin ,  Chun-Chih Chuang ,  Ming-Che Liu ,  Tsung-Ding Wang

IPC: H01L23/00 ,  H01L25/10 ,  H01L21/31 ,  H01L21/311 ,  H01L21/3205 ,  H01L23/522 ,  H01L23/528

Abstract: Methods of forming connectors and packaged semiconductor devices are disclosed. In some embodiments, a connector is formed by forming a first photoresist layer over an interconnect structure, and patterning the first photoresist layer. The patterned first photoresist layer is used to form a first opening in an interconnect structure. The patterned first photoresist is removed, and a second photoresist layer is formed over the interconnect structure and in the first opening. The second photoresist layer is patterned to form a second opening over the interconnect structure in the first opening. The second opening is narrower than the first opening. At least one metal layer is plated through the patterned second photoresist layer to form the connector.