公开(公告)号：US11688759B2

公开(公告)日：2023-06-27

申请号：US17305276

申请日：2021-07-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiang-Ku Shen ,  Ming-Hong Kao ,  Hui-Chi Chen ,  Dian-Hau Chen ,  Yen-Ming Chen

IPC: H01L23/522 ,  H01L49/02

CPC classification number: H01L28/60

Abstract: A metal-insulator-metal (MIM) capacitor structure includes a bottom electrode, a first oxide layer adjacent the bottom electrode, and a first high-k dielectric layer over the bottom electrode and the first oxide layer. A middle electrode is over the first high-k dielectric layer and a second oxide layer is adjacent the middle electrode. A second high-k dielectric layer may be over the middle electrode and the second oxide layer, a top electrode may be over the second high-k dielectric layer.

公开(公告)号：US11056556B2

公开(公告)日：2021-07-06

申请号：US16439385

申请日：2019-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiang-Ku Shen ,  Ming-Hong Kao ,  Hui-Chi Chen ,  Dian-Hau Chen ,  Yen-Ming Chen

IPC: H01L49/02

Abstract: A method of fabricating a metal-insulator-metal (MIM) capacitor structure includes forming a bottom electrode, forming a first oxide layer adjacent the bottom electrode, and depositing a first high-k dielectric layer over the bottom electrode and the first oxide layer. A middle electrode is then formed over the first high-k dielectric layer and a second oxide layer is formed adjacent the middle electrode. A second high-k dielectric layer may be deposited over the middle electrode and the second oxide layer and a top electrode over the second high-k dielectric layer.