公开(公告)号：US20210375779A1

公开(公告)日：2021-12-02

申请号：US16885278

申请日：2020-05-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng Chou ,  Chung-Chi Ko ,  Tze-Liang Lee ,  Ming-Tsung Lee

IPC: H01L23/532 ,  H01L21/768

Abstract: A semiconductor device including a substrate, a low-k dielectric layer, a cap layer, and a conductive layer is provided. The low-k dielectric layer is disposed over the substrate. The cap layer is disposed on the low-k dielectric layer, wherein a carbon atom content of the cap layer is greater than a carbon atom content of the low-k dielectric layer. The conductive layer is disposed in the cap layer and the low-k dielectric layer.

公开(公告)号：US20230154852A1

公开(公告)日：2023-05-18

申请号：US17651990

申请日：2022-02-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Tsung Lee ,  Yi-Wen Pan ,  Tzu-Nung Lu ,  You-Lan Li ,  Chung-Chi Ko

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/5329 ,  H01L23/5226 ,  H01L21/76804 ,  H01L21/7682 ,  H01L21/76877

Abstract: A method includes depositing a dielectric layer over a substrate, and etching the dielectric layer to form an opening and to expose a first conductive feature underlying the dielectric layer. The dielectric layer is formed using a precursor including nitrogen therein. The method further includes depositing a sacrificial spacer layer extending into the opening, and patterning the sacrificial spacer layer to remove a bottom portion of the sacrificial spacer layer. A vertical portion of the sacrificial spacer layer in the opening and on sidewalls of the dielectric layer is left to form a ring. A second conductive feature is formed in the opening. The second conductive feature is encircled by the ring, and is over and electrically coupled to the first conductive feature. At least a portion of the ring is removed to form an air spacer.

公开(公告)号：US20240387384A1

公开(公告)日：2024-11-21

申请号：US18789042

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Tsung Lee ,  Yi-Wen Pan ,  Tzu-Nung Lu ,  You-Lan Li ,  Chung-Chi Ko

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: A method includes depositing a dielectric layer over a substrate, and etching the dielectric layer to form an opening and to expose a first conductive feature underlying the dielectric layer. The dielectric layer is formed using a precursor including nitrogen therein. The method further includes depositing a sacrificial spacer layer extending into the opening, and patterning the sacrificial spacer layer to remove a bottom portion of the sacrificial spacer layer. A vertical portion of the sacrificial spacer layer in the opening and on sidewalls of the dielectric layer is left to form a ring. A second conductive feature is formed in the opening. The second conductive feature is encircled by the ring, and is over and electrically coupled to the first conductive feature. At least a portion of the ring is removed to form an air spacer.

公开(公告)号：US11929329B2

公开(公告)日：2024-03-12

申请号：US16885278

申请日：2020-05-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng Chou ,  Chung-Chi Ko ,  Tze-Liang Lee ,  Ming-Tsung Lee

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53295 ,  H01L21/76802 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76807 ,  H01L21/7684

Abstract: A semiconductor device including a substrate, a low-k dielectric layer, a cap layer, and a conductive layer is provided. The low-k dielectric layer is disposed over the substrate. The cap layer is disposed on the low-k dielectric layer, wherein a carbon atom content of the cap layer is greater than a carbon atom content of the low-k dielectric layer. The conductive layer is disposed in the cap layer and the low-k dielectric layer.