公开(公告)号：US20250087533A1

公开(公告)日：2025-03-13

申请号：US18619626

申请日：2024-03-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hsing Tsai ,  Ya-Lien Lee ,  Chih-Han Tseng ,  Kuei-Wen Huang ,  Kuan-Hung Ho ,  Ming-Uei Hung ,  Chih-Cheng Kuo ,  Yi-An Lai ,  Wei-Ting Chen

IPC: H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L29/66 ,  H01L29/78

Abstract: A method of forming a semiconductor device includes: forming a via in a first dielectric layer disposed over a substrate; forming a second dielectric layer over the first dielectric layer; forming an opening in the second dielectric layer, where the opening exposes an upper surface of the via; selectively forming a capping layer over the upper surface of the via, where the capping layer has a curved upper surface that extends above a first upper surface of the first dielectric layer distal from the substrate; after forming the capping layer, forming a barrier layer in the opening over the capping layer and along sidewalls of the second dielectric layer exposed by the opening; and filling the opening by forming an electrically conductive material over the barrier layer.