公开(公告)号：US20200098564A1

公开(公告)日：2020-03-26

申请号：US16415463

申请日：2019-05-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Ming-Yang LI ,  Lain-Jong LI ,  Chih-Piao CHUU

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  H01L29/10

摘要： In a method of forming a two-dimensional material layer, a nucleation pattern is formed over a substrate, and a transition metal dichalcogenide (TMD) layer is formed such that the TMD layer laterally grows from the nucleation pattern. In one or more of the foregoing and following embodiments, the TMD layer is single crystalline.

公开(公告)号：US20210249527A1

公开(公告)日：2021-08-12

申请号：US17240482

申请日：2021-04-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chao-Ching CHENG ,  Hung-Li CHIANG ,  Chun-Chieh LU ,  Ming-Yang LI ,  Tzu- Chiang CHEN

IPC分类号： H01L29/76 ,  H01L29/78 ,  H01L29/04 ,  H01L29/66 ,  H01L29/20 ,  H01L29/45

摘要： A process is provided to fabricate a finFET device having a semiconductor layer of a two-dimensional “2D” semiconductor material. The semiconductor layer of the 2D semiconductor material is a thin film layer formed over a dielectric fin-shaped structure. The 2D semiconductor layer extends over at least three surfaces of the dielectric fin structure, e.g., the upper surface and two sidewall surfaces. A vertical protrusion metal structure, referred to as “metal fin structure”, is formed about an edge of the dielectric fin structure and is used as a seed to grow the 2D semiconductor material.

公开(公告)号：US20240355914A1

公开(公告)日：2024-10-24

申请号：US18759611

申请日：2024-06-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chao-Ching CHENG ,  Hung-Li CHIANG ,  Chun-Chieh LU ,  Ming-Yang LI ,  Tzu- Chiang CHEN

IPC分类号： H01L29/76 ,  H01L29/04 ,  H01L29/20 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/7606 ,  H01L29/04 ,  H01L29/2003 ,  H01L29/454 ,  H01L29/66795 ,  H01L29/785

摘要： A process is provided to fabricate a finFET device having a semiconductor layer of a two-dimensional “2D” semiconductor material. The semiconductor layer of the 2D semiconductor material is a thin film layer formed over a dielectric fin-shaped structure. The 2D semiconductor layer extends over at least three surfaces of the dielectric fin structure, e.g., the upper surface and two sidewall surfaces. A vertical protrusion metal structure, referred to as “metal fin structure”, is formed about an edge of the dielectric fin structure and is used as a seed to grow the 2D semiconductor material.

公开(公告)号：US20230170406A1

公开(公告)日：2023-06-01

申请号：US18160256

申请日：2023-01-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chao-Ching CHENG ,  Hung-Li CHIANG ,  Chun-Chieh LU ,  Ming-Yang LI ,  Tzu- Chiang CHEN

IPC分类号： H01L29/76 ,  H01L29/78 ,  H01L29/04 ,  H01L29/66 ,  H01L29/20 ,  H01L29/45

CPC分类号： H01L29/7606 ,  H01L29/785 ,  H01L29/04 ,  H01L29/66795 ,  H01L29/2003 ,  H01L29/454

摘要： A process is provided to fabricate a finFET device having a semiconductor layer of a two-dimensional “2D” semiconductor material. The semiconductor layer of the 2D semiconductor material is a thin film layer formed over a dielectric fin-shaped structure. The 2D semiconductor layer extends over at least three surfaces of the dielectric fin structure, e.g., the upper surface and two sidewall surfaces. A vertical protrusion metal structure, referred to as “metal fin structure”, is formed about an edge of the dielectric fin structure and is used as a seed to grow the 2D semiconductor material.

公开(公告)号：US20210202265A1

公开(公告)日：2021-07-01

申请号：US16732205

申请日：2019-12-31

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Chih-Piao CHUU ,  Ming-Yang LI ,  Lain-Jong LI

IPC分类号： H01L21/441 ,  H01L21/02 ,  H01L29/66 ,  H01L29/24 ,  H01L29/786

摘要： A method of fabricating a semiconductor device includes applying a plasma to a portion of a metal dichalcogenide film. The metal dichalcogenide film includes a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof. A metal layer including a second metal is formed over the portion of the metal dichalcogenide film after applying the plasma.