公开(公告)号：US20240421194A1

公开(公告)日：2024-12-19

申请号：US18336382

申请日：2023-06-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-An LAI ,  Pan Chieh Yu ,  Chih-Hua WANG ,  Chan-Hong CHERN ,  Cheng-Hsiang HSIEH

IPC: H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure describes a semiconductor device having artificial field plates. The semiconductor device includes a first gallium nitride (GaN) layer on a substrate, an aluminum gallium nitride (AlGaN) layer on the first GaN layer, and a second GaN layer on the AlGaN layer. The first and second GaN layers includes different types of dopants. The semiconductor device further includes a gate contact structure in contact with the second GaN layer, first and second source/drain (S/D) contact structures in contact with the AlGaN layer, one or more artificial field plates between the gate contact structure and the first S/D contact structure. The first and second S/D contact structures are disposed at opposite sides of the gate contact structure. The one or more artificial field plates are separated from the first and second S/D contact structures and above the AlGaN layer.