公开(公告)号：US20250063824A1

公开(公告)日：2025-02-20

申请号：US18450475

申请日：2023-08-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lin-Yu HUANG ,  Shih-Fan CHEN ,  Sheng-Fu HSU ,  Yi-An LAI ,  Chan-Hong CHERN ,  Cheng-Hsiang HSIEH

IPC: H01L27/02 ,  H02H9/04

Abstract: This disclosure is directed to a circuit that includes a substrate, a target device on the substrate, and an electrostatic discharge (ESD) device electrically coupled to the target device. The ESD device includes an ESD detection circuit electrically coupled to a first reference voltage supply and a second reference voltage supply, an inverter circuit electrically coupled to the ESD detection circuit and configured to trigger in response to an ESD event on the first or second reference voltage supply, a rectifier circuit electrically coupled to the inverter circuit and configured to rectify a current discharged from the inverter circuit, and a transistor electrically coupled to the rectifier circuit and configured to discharge a remaining current passing through the rectifier circuit.

公开(公告)号：US20240421194A1

公开(公告)日：2024-12-19

申请号：US18336382

申请日：2023-06-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-An LAI ,  Pan Chieh Yu ,  Chih-Hua WANG ,  Chan-Hong CHERN ,  Cheng-Hsiang HSIEH

IPC: H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure describes a semiconductor device having artificial field plates. The semiconductor device includes a first gallium nitride (GaN) layer on a substrate, an aluminum gallium nitride (AlGaN) layer on the first GaN layer, and a second GaN layer on the AlGaN layer. The first and second GaN layers includes different types of dopants. The semiconductor device further includes a gate contact structure in contact with the second GaN layer, first and second source/drain (S/D) contact structures in contact with the AlGaN layer, one or more artificial field plates between the gate contact structure and the first S/D contact structure. The first and second S/D contact structures are disposed at opposite sides of the gate contact structure. The one or more artificial field plates are separated from the first and second S/D contact structures and above the AlGaN layer.