公开(公告)号：US20180033687A1

公开(公告)日：2018-02-01

申请号：US15223902

申请日：2016-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Hsiu HUNG ,  Sung-Li WANG ,  Pei-Wen WU ,  Yida LI ,  Chih-Wei CHANG ,  Huang-Yi HUANG ,  Cheng-Tung LIN ,  Jyh-Cherng SHEU ,  Yee-Chia YEO ,  Chi-On CHUI

IPC: H01L21/768

CPC classification number: H01L21/76856 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dielectric layer over a semiconductor substrate and forming an opening in the dielectric layer to expose a conductive element. The method also includes forming a conductive layer over the conductive element and modifying an upper portion of the conductive layer using a plasma operation to form a modified region. The method further includes forming a conductive plug over the modified region.