公开(公告)号：US20230155004A1

公开(公告)日：2023-05-18

申请号：US17651721

申请日：2022-02-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Wen Wu ,  Chun-Hsien Huang ,  Wei-Jung Lin ,  Chih-Wei Chang

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L29/786 ,  H01L21/8234

CPC classification number: H01L29/66795 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/0665 ,  H01L29/7851 ,  H01L29/41791 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78696

Abstract: A method includes depositing an inter-layer dielectric (ILD) over a source/drain region; forming a contact opening through the ILD, wherein the contact opening exposes the source/drain region; forming a metal-semiconductor alloy region on the source/drain region; depositing a first layer of a conductive material on the metal-semiconductor alloy region; depositing an isolation material along sidewalls of the contact opening and over the first layer of the conductive material; etching the isolation material to expose the first layer of the conductive material, wherein the isolation material extends along sidewalls of the contact opening after etching the isolation material; and depositing a second layer of the conductive material on the first layer of the conductive material.

公开(公告)号：US10658234B2

公开(公告)日：2020-05-19

申请号：US15223902

申请日：2016-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Hsiu Hung ,  Sung-Li Wang ,  Pei-Wen Wu ,  Yida Li ,  Chih-Wei Chang ,  Huang-Yi Huang ,  Cheng-Tung Lin ,  Jyh-Cherng Sheu ,  Yee-Chia Yeo ,  Chi-On Chui

IPC: H01L21/44 ,  H01L21/768 ,  H01L23/522 ,  H01L23/485 ,  H01L21/285 ,  H01L23/532

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dielectric layer over a semiconductor substrate and forming an opening in the dielectric layer to expose a conductive element. The method also includes forming a conductive layer over the conductive element and modifying an upper portion of the conductive layer using a plasma operation to form a modified region. The method further includes forming a conductive plug over the modified region.