公开(公告)号：US11380645B2

公开(公告)日：2022-07-05

申请号：US16935175

申请日：2020-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Chun-Hui Yu ,  Jeng-Nan Hung ,  Kuo-Chung Yee ,  Po-Fan Lin

IPC: H01L23/00 ,  H01L23/48

Abstract: A structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The first bonding structure includes a first dielectric layer and first conductors embedded in the first dielectric layer. The second semiconductor die includes a second bonding structure. The second bonding structure includes a second dielectric layer and second conductors embedded in the second dielectric layer. The first dielectric layer is in contact with the second dielectric layer, and the first conductors are in contact with the second conductors. Thermal conductivity of the first dielectric layer and the second dielectric layer is greater than thermal conductivity of silicon dioxide.

公开(公告)号：US11574853B2

公开(公告)日：2023-02-07

申请号：US16916115

申请日：2020-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Chun-Hui Yu ,  Jeng-Nan Hung ,  Kuo-Chung Yee ,  Po-Fan Lin

IPC: H01L23/46 ,  H01L23/367 ,  H01L23/433 ,  H01L23/31 ,  H01L23/00

Abstract: A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.

公开(公告)号：US20210159139A1

公开(公告)日：2021-05-27

申请号：US16942750

申请日：2020-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Chun-Hui Yu ,  Jeng-Nan Hung ,  Kuo-Chung Yee ,  Po-Fan Lin

IPC: H01L23/36 ,  H01L23/04 ,  H05K7/20

Abstract: A semiconductor device including a substrate, a semiconductor package, a plurality of pillars and a lid is provided. The semiconductor package is disposed on the substrate and includes at least one semiconductor die. The plurality of pillars are disposed on the semiconductor package. The lid is disposed on the substrate and covers the semiconductor package and the plurality of pillars. The lid includes an inflow channel and an outflow channel to allow a coolant to flow into and out of a space between the substrate, the semiconductor package, the plurality of pillars and the lid. An inner surface of the lid, which faces and overlaps the plurality of pillars along a stacking direction of the semiconductor package and the lid, is a flat surface.

公开(公告)号：US20210407887A1

公开(公告)日：2021-12-30

申请号：US16916115

申请日：2020-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Chun-Hui Yu ,  Jeng-Nan Hung ,  Kuo-Chung Yee ,  Po-Fan Lin

IPC: H01L23/46 ,  H01L23/367 ,  H01L23/433 ,  H01L23/31 ,  H01L23/00

Abstract: A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.

公开(公告)号：US11328975B2

公开(公告)日：2022-05-10

申请号：US16942750

申请日：2020-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Chun-Hui Yu ,  Jeng-Nan Hung ,  Kuo-Chung Yee ,  Po-Fan Lin

IPC: H01L23/36 ,  H01L23/04 ,  H05K7/20

Abstract: A semiconductor device including a substrate, a semiconductor package, a plurality of pillars and a lid is provided. The semiconductor package is disposed on the substrate and includes at least one semiconductor die. The plurality of pillars are disposed on the semiconductor package. The lid is disposed on the substrate and covers the semiconductor package and the plurality of pillars. The lid includes an inflow channel and an outflow channel to allow a coolant to flow into and out of a space between the substrate, the semiconductor package, the plurality of pillars and the lid. An inner surface of the lid, which faces and overlaps the plurality of pillars along a stacking direction of the semiconductor package and the lid, is a flat surface.

公开(公告)号：US20210159201A1

公开(公告)日：2021-05-27

申请号：US16935175

申请日：2020-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Chun-Hui Yu ,  Jeng-Nan Hung ,  Kuo-Chung Yee ,  Po-Fan Lin

IPC: H01L23/00 ,  H01L23/48

Abstract: A structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The first bonding structure includes a first dielectric layer and first conductors embedded in the first dielectric layer. The second semiconductor die includes a second bonding structure. The second bonding structure includes a second dielectric layer and second conductors embedded in the second dielectric layer. The first dielectric layer is in contact with the second dielectric layer, and the first conductors are in contact with the second conductors. Thermal conductivity of the first dielectric layer and the second dielectric layer is greater than thermal conductivity of silicon dioxide.