公开(公告)号：US11592748B2

公开(公告)日：2023-02-28

申请号：US16684457

申请日：2019-11-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hsuan Chuang ,  Po-Sheng Lu ,  Shou-Wen Kuo ,  Cheng-Yi Huang ,  Chia-Hung Chu

IPC: G03F7/16 ,  H01L21/027 ,  G03F7/004

Abstract: A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.

公开(公告)号：US11145521B2

公开(公告)日：2021-10-12

申请号：US15718044

申请日：2017-09-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Mei Hui Tsai ,  Hsiao-Yi Wang ,  Yen-Min Liao ,  Po-Sheng Lu

IPC: B08B3/04 ,  B08B3/10 ,  H01L21/67 ,  H01L23/60

Abstract: A method for cleaning a semiconductor substrate is provided. The method includes the steps of: applying a first agent onto a top surface of the semiconductor substrate while the semiconductor substrate is rotated at a first rotational frequency; immersing the semiconductor substrate in a second agent while rotating the semiconductor substrate at a second rotational frequency; and rotating the semiconductor substrate at a third rotational frequency while a third agent is introduced onto the top surface of the semiconductor substrate. The first rotational frequency may be greater than the third rotational frequency and the third rotational frequency is greater than the second rotational frequency. In some embodiments, the second rotational frequency is zero and the semiconductor substrate is held stationary during the immersing step.

公开(公告)号：US12216407B2

公开(公告)日：2025-02-04

申请号：US18114690

申请日：2023-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hsuan Chuang ,  Po-Sheng Lu ,  Shou-Wen Kuo ,  Cheng-Yi Huang ,  Chia-Hung Chu

IPC: G03F7/16 ,  G03F7/004 ,  H01L21/027

Abstract: A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.