公开(公告)号：US20190131134A1

公开(公告)日：2019-05-02

申请号：US15797869

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying LIN ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sean Lo ,  C.W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC: H01L21/285 ,  H01L23/532 ,  H01L23/535 ,  H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L21/768

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.