公开(公告)号：US20190131134A1

公开(公告)日：2019-05-02

申请号：US15797869

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying LIN ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sean Lo ,  C.W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC: H01L21/285 ,  H01L23/532 ,  H01L23/535 ,  H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L21/768

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US11728170B2

公开(公告)日：2023-08-15

申请号：US17370684

申请日：2021-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying Lin ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sheng-Yung Lo ,  C. W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  C23C16/16

CPC classification number: H01L21/28556 ,  H01L21/28568 ,  H01L21/76805 ,  H01L21/76832 ,  H01L21/76895 ,  H01L23/535 ,  H01L23/53257 ,  H01L23/53295 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851 ,  C23C16/16

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US11062908B2

公开(公告)日：2021-07-13

申请号：US16596617

申请日：2019-10-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying Lin ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sheng-Yung Lo ,  C. W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/78 ,  H01L29/417 ,  H01L23/535 ,  H01L29/08 ,  H01L29/66 ,  C23C16/16

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US10763116B2

公开(公告)日：2020-09-01

申请号：US15797869

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying Lin ,  Cheng-Yi Wu ,  Alan Tu ,  Chung-Liang Cheng ,  Li-Hsuan Chu ,  Ethan Hsiao ,  Hui-Lin Sung ,  Sz-Yuan Hung ,  Sheng-Yung Lo ,  C. W. Chiu ,  Chih-Wei Hsieh ,  Chin-Szu Lee

IPC: H01L21/285 ,  H01L29/66 ,  H01L21/768 ,  H01L29/78 ,  H01L29/08 ,  H01L23/535 ,  H01L23/532 ,  C23C16/16 ,  H01L29/417

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.