公开(公告)号：US20230069081A1

公开(公告)日：2023-03-02

申请号：US17461004

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chan LI ,  Sheng-Chau CHEN ,  Cheng-Hsien CHOU ,  Cheng-Yuan TSAI

IPC: H01L21/66 ,  H01L21/02 ,  H01J37/32 ,  C23C16/52 ,  C23C16/50 ,  C23C16/46

Abstract: A thin-film deposition system includes a top plate positioned above a wafer and configured to generate a plasma during a thin-film deposition process. The system includes a gap sensor configured to generate sensor signals indicative of a gap between the wafer and the top plate. The system includes a control system configured to adjust the gap during the thin-film deposition process responsive to the sensor signals.

公开(公告)号：US20240387299A1

公开(公告)日：2024-11-21

申请号：US18787835

申请日：2024-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chan LI ,  Sheng-Chau CHEN ,  Cheng-Hsien CHOU ,  Cheng-Yuan TSAI

IPC: H01L21/66 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02

Abstract: A thin-film deposition system includes a top plate positioned above a wafer and configured to generate a plasma during a thin-film deposition process. The system includes a gap sensor configured to generate sensor signals indicative of a gap between the wafer and the top plate. The system includes a control system configured to adjust the gap during the thin-film deposition process responsive to the sensor signals.

公开(公告)号：US20150243537A1

公开(公告)日：2015-08-27

申请号：US14710227

申请日：2015-05-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sheng-Chau CHEN ,  Chih-Hui HUANG ,  Yeur-Luen TU ,  Cheng-Ta WU ,  Chia-Shiung TSAI ,  Xiao-Meng CHEN

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/18 ,  H01L21/02 ,  H01L21/768

Abstract: The mechanisms for cleaning a surface of a semiconductor wafer for a hybrid bonding are provided. The method for cleaning a surface of a semiconductor wafer for a hybrid bonding includes providing a semiconductor wafer, and the semiconductor wafer has a conductive pad embedded in an insulating layer. The method also includes performing a plasma process to a surface of the semiconductor wafer, and metal oxide is formed on a surface of the conductive structure. The method further includes performing a cleaning process using a cleaning solution to perform a reduction reaction with the metal oxide, such that metal-hydrogen bonds are formed on the surface of the conductive structure. The method further includes transferring the semiconductor wafer to a bonding chamber under vacuum for hybrid bonding. The mechanisms for a hybrid bonding and a integrated system are also provided.

Abstract translation: 提供了用于清洁用于混合键合的半导体晶片的表面的机构。 用于清洁用于混合键合的半导体晶片的表面的方法包括提供半导体晶片，并且半导体晶片具有嵌入绝缘层中的导电焊盘。 该方法还包括对半导体晶片的表面进行等离子体处理，并且在导电结构的表面上形成金属氧化物。 该方法还包括使用清洁溶液进行清洁处理以与金属氧化物进行还原反应，使得在导电结构的表面上形成金属 - 氢键。 该方法还包括将半导体晶片在真空下转移到接合室用于混合键合。 还提供了用于混合键合和集成系统的机制。