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公开(公告)号：US20240379727A1
公开(公告)日：2024-11-14
申请号：US18782156
申请日：2024-07-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi-Ming LU , Yao-Hsiang LIANG , Sheng-Chan LI , Jung-Chih TSAO , Chih-Hui HUANG
IPC: H01L27/146 , H01L21/285 , H01L21/3205 , H01L21/3213
Abstract: A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film.
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公开(公告)号：US20210050460A1
公开(公告)日：2021-02-18
申请号：US16845005
申请日：2020-04-09
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Cheng-Han LIN , Chao-Ching CHANG , Yi-Ming LIN , Yen-Ting CHOU , Yen-Chang CHEN , Sheng-Chan LI , Cheng-Hsien CHOU
IPC: H01L31/0216 , H01L31/0232 , H01L27/146 , H01L31/18
Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.
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公开(公告)号：US20220415959A1
公开(公告)日：2022-12-29
申请号：US17859834
申请日：2022-07-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi-Ming LU , Chih-Hui HUANG , Sheng-Chan LI , Jung-Chih TSAO , Yao-Hsiang LIANG
IPC: H01L27/146 , H01L21/3213 , H01L21/285 , H01L21/3205
Abstract: A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film.
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公开(公告)号：US20220278242A1
公开(公告)日：2022-09-01
申请号：US17744398
申请日：2022-05-13
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Cheng-Han LIN , Chao-Ching CHANG , Yi-Ming LIN , Yen-Ting CHOU , Yen-Chang CHEN , Sheng-Chan LI , Cheng-Hsien CHOU
IPC: H01L31/0216 , H01L31/18 , H01L27/146 , H01L31/0232
Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.
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公开(公告)号：US20230069081A1
公开(公告)日：2023-03-02
申请号：US17461004
申请日：2021-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Sheng-Chan LI , Sheng-Chau CHEN , Cheng-Hsien CHOU , Cheng-Yuan TSAI
Abstract: A thin-film deposition system includes a top plate positioned above a wafer and configured to generate a plasma during a thin-film deposition process. The system includes a gap sensor configured to generate sensor signals indicative of a gap between the wafer and the top plate. The system includes a control system configured to adjust the gap during the thin-film deposition process responsive to the sensor signals.
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Patent Agency Ranking
公开(公告)号：US20240387299A1
公开(公告)日：2024-11-21
申请号：US18787835
申请日：2024-07-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Sheng-Chan LI , Sheng-Chau CHEN , Cheng-Hsien CHOU , Cheng-Yuan TSAI
Abstract: A thin-film deposition system includes a top plate positioned above a wafer and configured to generate a plasma during a thin-film deposition process. The system includes a gap sensor configured to generate sensor signals indicative of a gap between the wafer and the top plate. The system includes a control system configured to adjust the gap during the thin-film deposition process responsive to the sensor signals.
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公开(公告)号：US20230369516A1
公开(公告)日：2023-11-16
申请号：US18354536
申请日：2023-07-18
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Cheng-Han LIN , Chao-Ching CHANG , Yi-Ming LIN , Yen-Ting CHOU , Yen-Chang CHEN , Sheng-Chan LI , Cheng-Hsien CHOU
IPC: H01L31/0216 , H01L31/18 , H01L27/146 , H01L31/0232
CPC classification number: H01L31/0216 , H01L31/18 , H01L27/14636 , H01L31/0232
Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating. wherein the composite etch stop mask layer includes a silicon nitride layer and a stressed layer. A percentage of Si—H bonds in the silicon nitride layer is greater than a percentage of Si—H bonds in the stressed layer.
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公开(公告)号：US20200083278A1
公开(公告)日：2020-03-12
申请号：US16680043
申请日：2019-11-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi-Ming LU , Chih-Hui HUANG , Sheng-Chan LI , Jung-Chih TSAO , Yao-Hsiang LIANG
IPC: H01L27/146 , H01L21/3205 , H01L21/285 , H01L21/3213
Abstract: A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film.
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公开(公告)号：US20190035829A1
公开(公告)日：2019-01-31
申请号：US16055308
申请日：2018-08-06
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chao-Ching CHANG , Sheng-Chan LI , Cheng-Hsien CHOU , Tsung-Wei HUANG , Min-Hui LIN , Yi-Ming LIN
IPC: H01L27/146 , H01L21/02 , H01L21/3105
Abstract: An image sensor device is provided. The image sensor device includes a substrate having a first surface, a second surface, and a light-sensing region. The image sensor device includes a first isolation structure in the substrate and adjacent to the first surface. The first isolation structure surrounds the light-sensing region. The image sensor device includes a second isolation structure passing through the first isolation structure and the substrate under the first isolation structure. The second isolation structure surrounds the light-sensing region and a portion of the first isolation structure.
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公开(公告)号：US20170317134A1
公开(公告)日：2017-11-02
申请号：US15231390
申请日：2016-08-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi-Ming LU , Chih-Hui HUANG , Sheng-Chan LI , Jung-Chih TSAO , Yao-Hsiang LIANG
IPC: H01L27/146 , H01L21/285 , H01L21/3205
Abstract: A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film.
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