公开(公告)号：US20030216046A1

公开(公告)日：2003-11-20

申请号：US10146864

申请日：2002-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jeng-Yang Pan ,  Chin-Te Huang ,  Chen-Yi Huang ,  Sheng-Wen Chen

IPC: H01L021/302

CPC classification number: H01L21/02087 ,  H01L21/02074 ,  H01L21/0209 ,  Y10T29/41

Abstract: A method and system for reducing wafer edge residue following a chemical mechanical polishing operation. A semiconductor wafer can be polished utilizing a chemical mechanical polishing apparatus. Thereafter, an acid etch operation may be performed to remove a residue, such as tungsten (W), collected on the semiconductor wafer as a result of the chemical mechanical polishing operation. A spin etch operation removes residue from the edges of the semiconductor wafer following chemical mechanical polishing of the semiconductor wafer.

Abstract translation: 在化学机械抛光操作之后减少晶片边缘残留物的方法和系统。 可以利用化学机械抛光装置对半导体晶片进行抛光。 此后，作为化学机械抛光操作的结果，可以进行酸蚀刻操作以除去在半导体晶片上收集的诸如钨（W）的残留物。 旋转蚀刻操作在半导体晶片的化学机械抛光之后从半导体晶片的边缘去除残留物。