公开(公告)号：US20030230237A1

公开(公告)日：2003-12-18

申请号：US10170957

申请日：2002-06-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsi-Kuei Cheng ,  Ting-Chu Wang ,  Yu-Ku Lin ,  Chin-Te Huang ,  Huai-Tei Yang ,  Chun-Chang Chen ,  Yi-Lang Wang

IPC: B05C013/00 ,  B05C013/02

CPC classification number: H01L21/68735 ,  H01L21/6875 ,  Y10S269/903

Abstract: An improved hoop support for semiconductor wafers reduces contamination of the wafer during edge beveling operations through the use of support pins that make only line contact with the wafer. The support pins are spaced around the periphery of the hoop and possess a triangular cross section. Two intersecting sides of the pins form an edge that defines the line contact with the wafer. These intersecting sides are preferably inclined relative to the wafer at an angle of between 60 and 80 degrees.

Abstract translation: 用于半导体晶片的改进的环形支撑通过使用仅与晶片线接触的支撑销来减少边缘斜切操作期间晶片的污染。 支撑销围绕环的周边间隔开并且具有三角形横截面。 销的两个相交的侧面形成限定与晶片的线接触的边缘。 这些相交侧优选以60度和80度之间的角度相对于晶片倾斜。

公开(公告)号：US20030101799A1

公开(公告)日：2003-06-05

申请号：US09997906

申请日：2001-11-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Te Huang ,  Hung Fa Chen

IPC: G01M003/04 ,  G08B021/00

CPC classification number: G01M3/165 ,  G01M3/16

Abstract: Liquid leaks from a vessel cause shorts between at least one elongate sensing wire and another conductor when the fluid absorbs into the porous sheath of the sensing wire. The other conductor may comprise a second elongate sensing wire having similar porous sheath or a conductive tray or other conductive collection means. The sensing wire is placed in proximity to the vessel, such as beneath or immediately adjacent. Shorts are detected from the electrical characteristics of a circuit including the sensing wire and location is determined therefrom.

Abstract translation: 当流体吸收到感测线的多孔护套中时，液体从容器中泄漏导致至少一根细长的感测线与另一导体之间的短路。 另一个导体可以包括具有相似的多孔护套或导电托盘或其他导电收集装置的第二细长感测线。 感测线被放置在容器附近，例如在下方或紧邻处。 根据包括传感线的电路的电气特性检测短裤，并且由此确定位置。

公开(公告)号：US20030216046A1

公开(公告)日：2003-11-20

申请号：US10146864

申请日：2002-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jeng-Yang Pan ,  Chin-Te Huang ,  Chen-Yi Huang ,  Sheng-Wen Chen

IPC: H01L021/302

CPC classification number: H01L21/02087 ,  H01L21/02074 ,  H01L21/0209 ,  Y10T29/41

Abstract: A method and system for reducing wafer edge residue following a chemical mechanical polishing operation. A semiconductor wafer can be polished utilizing a chemical mechanical polishing apparatus. Thereafter, an acid etch operation may be performed to remove a residue, such as tungsten (W), collected on the semiconductor wafer as a result of the chemical mechanical polishing operation. A spin etch operation removes residue from the edges of the semiconductor wafer following chemical mechanical polishing of the semiconductor wafer.

Abstract translation: 在化学机械抛光操作之后减少晶片边缘残留物的方法和系统。 可以利用化学机械抛光装置对半导体晶片进行抛光。 此后，作为化学机械抛光操作的结果，可以进行酸蚀刻操作以除去在半导体晶片上收集的诸如钨（W）的残留物。 旋转蚀刻操作在半导体晶片的化学机械抛光之后从半导体晶片的边缘去除残留物。