公开(公告)号：US20200350430A1

公开(公告)日：2020-11-05

申请号：US16933255

申请日：2020-07-20

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun Hsiung Tsai ,  Sheng-Wen Yu ,  Ziwei Fang

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L21/265 ,  H01L29/165

摘要： A method includes forming a first channel region and a first gate structure formed over the first channel region. A first source/drain region is formed adjacent the first channel region and the first source/drain region includes a crystalline structure doped with a first dopant. A first silicide is formed over the first source/drain region. The first source/drain region includes a first concentration of the first dopant between 2.0×1021 atoms per centimeter cubed and 4.0×1021 atoms per centimeter cubed at a depth of 8 to 10 nanometers.

公开(公告)号：US11387363B2

公开(公告)日：2022-07-12

申请号：US16933255

申请日：2020-07-20

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun Hsiung Tsai ,  Sheng-Wen Yu ,  Ziwei Fang

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L21/265 ,  H01L29/66 ,  H01L29/165

摘要： A method includes forming a first channel region and a first gate structure formed over the first channel region. A first source/drain region is formed adjacent the first channel region and the first source/drain region includes a crystalline structure doped with a first dopant. A first silicide is formed over the first source/drain region. The first source/drain region includes a first concentration of the first dopant between 2.0×1021 atoms per centimeter cubed and 4.0×1021 atoms per centimeter cubed at a depth of 8 to 10 nanometers.

公开(公告)号：US10134896B2

公开(公告)日：2018-11-20

申请号：US13782112

申请日：2013-03-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun Hsiung Tsai ,  Sheng-Wen Yu ,  Ying-Min Chou ,  Yi-Fang Pai

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L29/66

摘要： A semiconductor substructure with an improved source/drain structure is described. The semiconductor substructure can include an upper surface; a gate structure formed over the substrate; a spacer formed along a sidewall of the gate structure; and a source/drain structure disposed adjacent the gate structure. The source/drain structure is disposed over or on a recess surface of a recess that extends below said upper surface. The source/drain structure includes a first epitaxial layer, having a first composition, over or on the interface surface, and a subsequent epitaxial layer, having a subsequent composition, over or on the first epitaxial layer. A dopant concentration of the subsequent composition is greater than a dopant concentration of the first composition, and a carbon concentration of the first composition ranges from 0 to 1.4 at.-%. Methods of making semiconductor substructures including improved source/drain structures are also described.