公开(公告)号：US20220085167A1

公开(公告)日：2022-03-17

申请号：US17456799

申请日：2021-11-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sherry Li ,  Chia-Der Chang ,  Yi-Jing Lee

IPC: H01L29/10 ,  H01L21/02 ,  H01L21/306 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/165

Abstract: The present disclosure describes a method for forming ultra-thin fins with a tapered bottom profile for improved structural rigidity and gate control characteristics. The method includes forming a fin structure that includes an epitaxial layer portion and a doped region portion surrounded by an isolation region so that a top section of the epitaxial layer portion is above the isolation region. The method also includes depositing a silicon-based layer on the top portion of the epitaxial layer above the isolation region and annealing the silicon-based layer to reflow the silicon-based layer. The method further includes etching the silicon-based layer and the fin structure above the isolation region to form a first bottom tapered profile in the fin structure above the isolation region and annealing the fin structure to form a second bottom tapered profile below the first bottom tapered profile and above the isolation region.

公开(公告)号：US11189697B2

公开(公告)日：2021-11-30

申请号：US16837510

申请日：2020-04-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sherry Li ,  Chia-Der Chang ,  Yi-Jing Lee

IPC: H01L29/10 ,  H01L21/8234 ,  H01L21/306 ,  H01L21/762 ,  H01L27/088 ,  H01L21/02 ,  H01L29/165

Abstract: The present disclosure describes a method for forming ultra-thin fins with a tapered bottom profile for improved structural rigidity and gate control characteristics. The method includes forming a fin structure that includes an epitaxial layer portion and a doped region portion surrounded by an isolation region so that a top section of the epitaxial layer portion is above the isolation region. The method also includes depositing a silicon-based layer on the top portion of the epitaxial layer above the isolation region and annealing the silicon-based layer to reflow the silicon-based layer. The method further includes etching the silicon-based layer and the fin structure above the isolation region to form a first bottom tapered profile in the fin structure above the isolation region and annealing the fin structure to form a second bottom tapered profile below the first bottom tapered profile and above the isolation region.

公开(公告)号：US11862683B2

公开(公告)日：2024-01-02

申请号：US17456799

申请日：2021-11-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sherry Li ,  Chia-Der Chang ,  Yi-Jing Lee

IPC: H01L29/10 ,  H01L21/02 ,  H01L27/088 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/306 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/8238 ,  H01L21/308

CPC classification number: H01L29/1054 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/1037 ,  H01L29/165

Abstract: The present disclosure describes a method for forming ultra-thin fins with a tapered bottom profile for improved structural rigidity and gate control characteristics. The method includes forming a fin structure that includes an epitaxial layer portion and a doped region portion surrounded by an isolation region so that a top section of the epitaxial layer portion is above the isolation region. The method also includes depositing a silicon-based layer on the top portion of the epitaxial layer above the isolation region and annealing the silicon-based layer to reflow the silicon-based layer. The method further includes etching the silicon-based layer and the fin structure above the isolation region to form a first bottom tapered profile in the fin structure above the isolation region and annealing the fin structure to form a second bottom tapered profile below the first bottom tapered profile and above the isolation region.