公开(公告)号：US10930781B2

公开(公告)日：2021-02-23

申请号：US16710156

申请日：2019-12-11

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shahaji B. More ,  Huai-Tei Yang ,  Shih-Chieh Chang ,  Shu Kuan ,  Cheng-Han Lee

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L21/82 ,  H01L29/16 ,  H01L29/161 ,  H01L21/8234 ,  H01L29/10

摘要： In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.

公开(公告)号：US12021143B2

公开(公告)日：2024-06-25

申请号：US18362210

申请日：2023-07-31

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shahaji B. More ,  Huai-Tei Yang ,  Shih-Chieh Chang ,  Shu Kuan ,  Cheng-Han Lee

IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66

CPC分类号： H01L29/7848 ,  H01L21/823431 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66492 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7834 ,  H01L29/785

摘要： In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.

公开(公告)号：US20230378359A1

公开(公告)日：2023-11-23

申请号：US18362210

申请日：2023-07-31

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shahaji B. More ,  Huai-Tei Yang ,  Shih-Chieh Chang ,  Shu Kuan ,  Cheng-Han Lee

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/161 ,  H01L21/8234 ,  H01L29/10 ,  H01L29/16

CPC分类号： H01L29/7848 ,  H01L29/785 ,  H01L29/66545 ,  H01L29/161 ,  H01L29/66803 ,  H01L21/823431 ,  H01L29/66795 ,  H01L29/1054 ,  H01L29/7834 ,  H01L29/16 ,  H01L29/66492

摘要： In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.

公开(公告)号：US11817499B2

公开(公告)日：2023-11-14

申请号：US17852741

申请日：2022-06-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shahaji B. More ,  Huai-Tei Yang ,  Shih-Chieh Chang ,  Shu Kuan ,  Cheng-Han Lee

IPC分类号： H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  H01L29/161 ,  H01L21/8234

CPC分类号： H01L29/7848 ,  H01L21/823431 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66492 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785 ,  H01L29/7834

摘要： In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.

公开(公告)号：US20220352374A1

公开(公告)日：2022-11-03

申请号：US17852741

申请日：2022-06-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shahaji B. More ,  Huai-Tei Yang ,  Shih-Chieh Chang ,  Shu Kuan ,  Cheng-Han Lee

IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66

摘要： In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.

公开(公告)号：US11367784B2

公开(公告)日：2022-06-21

申请号：US16902170

申请日：2020-06-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Shahaji B. More ,  Chien Lin ,  Cheng-Han Lee ,  Shih-Chieh Chang ,  Shu Kuan

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L21/306 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/161 ,  H01L29/10

摘要： In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial gate structure is formed over the fin structure. A source/drain region of the fin structure, which is not covered by the sacrificial gate structure, is etched, thereby forming a source/drain space. The first semiconductor layers are laterally etched through the source/drain space. An inner spacer made of a dielectric material is formed on an end of each of the etched first semiconductor layers. A source/drain epitaxial layer is formed in the source/drain space to cover the inner spacer. At least one of the first semiconductor layers has a composition which changes along a stacked direction of the first semiconductor layers and second semiconductor layers.

公开(公告)号：US20210175359A1

公开(公告)日：2021-06-10

申请号：US17181234

申请日：2021-02-22

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shahaji B. More ,  Huai-Tei Yang ,  Shih-Chieh Chang ,  Shu Kuan ,  Cheng-Han Lee

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66 ,  H01L29/161 ,  H01L21/8234

摘要： In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.

公开(公告)号：US10510889B2

公开(公告)日：2019-12-17

申请号：US15922681

申请日：2018-03-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shahaji B. More ,  Huai-Tei Yang ,  Shih-Chieh Chang ,  Shu Kuan ,  Cheng-Han Lee

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161 ,  H01L21/8234

摘要： In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.