公开(公告)号：US20230163169A1

公开(公告)日：2023-05-25

申请号：US18158148

申请日：2023-01-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei CHANG ,  Shuen-Shin LIANg ,  Sung-Li WANG ,  Hsu-Kai CHANG ,  Chia-Hung CHU ,  Chien-Shun LIAO ,  Yi-Ying LIU

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/417 ,  H01L29/10

CPC classification number: H01L29/0665 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/41733 ,  H01L29/1033

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and methods of fabricating the same are disclosed. The semiconductor device includes first and second S/D regions, a nanostructured channel region disposed between the first and second S/D regions, a gate structure surrounding the nanostructured channel region, first and second contact structures disposed on first surfaces of the first and second S/D regions, a third contact structure disposed on a second surface of the first S/D region, and an etch stop layer disposed on a second surface of the second S/D region. The third contact structure includes a metal silicide layer, a silicide nitride layer disposed on the metal silicide layer, and a conductive layer disposed on the silicide nitride layer.