公开(公告)号：US20180315856A1

公开(公告)日：2018-11-01

申请号：US15624402

申请日：2017-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Jier Yang ,  Tai-Hsin Chiu

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device includes an active region spanning along a first direction. The semiconductor device includes a first elongated gate spanning along a second direction substantially perpendicular to the first direction. The first elongated gate includes a first portion that is disposed over the active region and a second portion that is not disposed over the active region. The first portion and the second portion include different materials. The semiconductor device includes a second elongated gate spanning along the second direction and separated from the first elongated gate in the first direction. The second elongated gate includes a third portion that is disposed over the active region and a fourth portion that is not disposed over the active region. The third portion and the fourth portion include different materials.

公开(公告)号：US20230231028A1

公开(公告)日：2023-07-20

申请号：US18190221

申请日：2023-03-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Jier Yang ,  Tai-Hsin Chiu

IPC: H01L29/51 ,  H01L29/49 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L27/02

CPC classification number: H01L29/513 ,  H01L29/4966 ,  H01L29/4238 ,  H01L29/66795 ,  H01L29/66545 ,  H01L29/7856 ,  H01L29/7845 ,  H01L27/0207 ,  H01L29/495 ,  H01L29/4983 ,  H01L21/82345

Abstract: A semiconductor device includes an active region spanning along a first direction. The semiconductor device includes a first elongated gate spanning along a second direction substantially perpendicular to the first direction. The first elongated gate includes a first portion that is disposed over the active region and a second portion that is not disposed over the active region. The first portion and the second portion include different materials. The semiconductor device includes a second elongated gate spanning along the second direction and separated from the first elongated gate in the first direction. The second elongated gate includes a third portion that is disposed over the active region and a fourth portion that is not disposed over the active region. The third portion and the fourth portion include different materials.

公开(公告)号：US10522643B2

公开(公告)日：2019-12-31

申请号：US15624402

申请日：2017-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Jier Yang ,  Tai-Hsin Chiu

IPC: H01L29/51 ,  H01L29/49 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L27/02 ,  H01L21/8234

Abstract: A semiconductor device includes an active region spanning along a first direction. The semiconductor device includes a first elongated gate spanning along a second direction substantially perpendicular to the first direction. The first elongated gate includes a first portion that is disposed over the active region and a second portion that is not disposed over the active region. The first portion and the second portion include different materials. The semiconductor device includes a second elongated gate spanning along the second direction and separated from the first elongated gate in the first direction. The second elongated gate includes a third portion that is disposed over the active region and a fourth portion that is not disposed over the active region. The third portion and the fourth portion include different materials.

公开(公告)号：US11616131B2

公开(公告)日：2023-03-28

申请号：US16719591

申请日：2019-12-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Jier Yang ,  Tai-Hsin Chiu

IPC: H01L29/51 ,  H01L29/49 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L27/02 ,  H01L21/8234

Abstract: A semiconductor device includes an active region spanning along a first direction. The semiconductor device includes a first elongated gate spanning along a second direction substantially perpendicular to the first direction. The first elongated gate includes a first portion that is disposed over the active region and a second portion that is not disposed over the active region. The first portion and the second portion include different materials. The semiconductor device includes a second elongated gate spanning along the second direction and separated from the first elongated gate in the first direction. The second elongated gate includes a third portion that is disposed over the active region and a fourth portion that is not disposed over the active region. The third portion and the fourth portion include different materials.