公开(公告)号：US20220382160A1

公开(公告)日：2022-12-01

申请号：US17883576

申请日：2022-08-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chin-Hsiung HSU ,  Huang-Yu CHEN ,  Tseng-Hua OU ,  Wen-Hao CHEN

IPC分类号： G03F7/20 ,  H05K3/00 ,  G06F30/39 ,  H05K3/06 ,  G03F1/70 ,  H01L21/3213

摘要： A method includes: providing a first layout of a first layer over a substrate, the first layer having at least one metal pattern, and generating a second layout by placing a cut mask at a first position relative to the substrate to remove material from a first region of the at least one metal pattern to provide a first metal pattern and placing the cut mask at a second position relative to the first layer over the substrate to remove material from a second region of the at least one metal pattern to provide a second metal pattern.