公开(公告)号：US20230065318A1

公开(公告)日：2023-03-02

申请号：US17461412

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Han Fan ,  Wei-Yang Lee ,  Tzu-Hua Chiu ,  Chia-Pin Lin

IPC: H01L29/40 ,  H01L29/417 ,  H01L21/768

Abstract: A method of forming a semiconductor including forming a source/drain feature adjacent to a semiconductor layer stack disposed over a substrate. The method further includes forming a dummy fin adjacent to the source/drain feature and adjacent to the semiconductor layer stack. The method further includes performing an etching process from a backside of the substrate to remove a first portion of the dummy fin adjacent to the source/drain feature, thereby forming a first trench in the dummy fin, where the first trench extends from the dummy fin to the source/drain feature. The method further includes forming a first dielectric layer in the first trench and replacing a second portion of the dummy fin with a source/drain contact.